IXYS - IGBTs
1,045 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Package / Case | Mounting Style | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Maximum Gate Emitter Voltage | Continuous Collector Current at 25 C | Pd - Power Dissipation | Minimum Operating Temperature | Maximum Operating Temperature | Series | Qualification | Packaging |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | TO-247AD-3 | Through Hole | Single | 1.2 kV | 4.4 V | - 20 V, 20 V | 75 A | 380 W | - 55 C | + 150 C | IXGH40N120 | Tube | ||||
Mfr: IXXK100N60C3H1 TTI: IXXK100N60C3H1 IXYS Availability: 0In StockIGBTs XPT IGBT C3-Class 600V/170Amp CoPacked | 0In Stock | Si | TO-264 | Through Hole | Single | 600 V | 2.2 V | - 20 V, 20 V | 170 A | 695 W | - 55 C | + 150 C | IXXK100N60 | Tube | |||
0In Stock | Si | - 20 V, 20 V | High Voltage | Tube | |||||||||||||
0In Stock | Si | D2PAK-3 (TO-263-3) | SMD/SMT | Single | 600 V | 1.55 V | - 20 V, 20 V | 120 A | 600 W | - 55 C | + 175 C | Tube | |||||
0In Stock | Si | TO-247-3 | Through Hole | Single | 650 V | 1.7 V | - 20 V, 20 V | 86 A | 300 W | - 55 C | + 175 C | Tube | |||||
0In Stock | Si | SMD/SMT | Single | 900 V | 2.7 V | - 20 V, 20 V | 165 A | 830 W | - 55 C | + 175 C | Planar | Tube | |||||
Mfr: IXGK55N120A3H1 TTI: IXGK55N120A3H1 IXYS Availability: 0In StockIGBTs Low-Frequency Range Low Vcesat w/ Diode | 0In Stock | Si | TO-264-3 | Through Hole | Single | 1.2 kV | 1.85 V | 20 V | 125 A | - 55 C | + 150 C | IXGK55N120 | Tube | ||||
0In Stock | Tube | ||||||||||||||||
0In Stock | Si | TO-247-3 | Through Hole | Single | 650 V | 1.8 V | - 20 V, 20 V | 240 A | 470 W | - 55 C | + 175 C | Tube | |||||
0In Stock | Si | TO-247-3 | Through Hole | Single | 1.2 kV | 2.1 V | - 20 V, 20 V | 100 A | 500 W | - 55 C | + 175 C | Trench - 650V - 1200V GenX43 | Tube | ||||
0In Stock | Si | TO-247-3 | Through Hole | Single | 1.2 kV | 1.8 V | - 20 V, 20 V | 140 A | 600 W | - 55 C | + 175 C | Trench - 650V - 1200V GenX45 | Tube | ||||
0In Stock | Si | TO-220-3 | Through Hole | Single | 900 V | 3 V | - 20 V, 20 V | 20 A | 125 W | - 55 C | + 175 C | IXYP8N90 | Tube | ||||
0In Stock | Si | - 20 V, 20 V | IXXN200N60 | Tube | |||||||||||||
0In Stock | Si | - 20 V, 20 V | IXXN200N60 | Tube | |||||||||||||
0In Stock | Si | D3PAK-3 (TO-268-3) | SMD/SMT | Single | 1.7 kV | 5.2 V | - 20 V, 20 V | - 55 C | + 150 C | Tube | |||||||
0In Stock | Si | D3PAK-3 (TO-268-3) | SMD/SMT | Single | 1.7 kV | 2.7 V | - 20 V, 20 V | 32 A | 190 W | - 55 C | + 150 C | IXGT16N170 | Tube | ||||
0In Stock | Si | TO-247AD-3 | Through Hole | Single | 900 V | - 20 V, 20 V | - 55 C | + 150 C | IXGH50N90 | Tube | |||||||
0In Stock | Si | TO-247-PLUS-3 | Through Hole | Single | 1.2 kV | 1.85 V | - 20 V, 20 V | 240 A | 830 W | - 55 C | + 150 C | IXGX120N120 | Tube | ||||
0In Stock | Si | D3PAK-3 (TO-268-3) | SMD/SMT | Single | 3 kV | 3.2 V | - 20 V, 20 V | 30 A | 160 W | - 55 C | + 150 C | Very High Voltage | Tube | ||||
0In Stock | Si | TO-263HV-3 | SMD/SMT | Single | 3 kV | 2.2 V | - 20 V, 20 V | 38 A | 200 W | - 55 C | + 150 C | Very High Voltage | Tube | ||||
0In Stock | Si | TO-264-3 | Through Hole | Single | 900 V | 2.7 V | - 20 V, 20 V | 310 A | 1.63 kW | - 55 C | + 175 C | Planar | Tube | ||||
0In Stock | Si | - 20 V, 20 V | Planar | Tube | |||||||||||||
Mfr: IXYN110N120C4 TTI: IXYN110N120C4 IXYS Availability: 0In StockIGBTs XPT thin-wafer technology, 4th generation (Gen 4) Trench IGBT. Disc IGBT Gen 4 XPT SOT227B | 0In Stock | Si | SOT-227-4 | Screw Mount | Single | 1.2 kV | 2.4 V | - 20 V, 20 V | 220 A | 830 W | - 55 C | + 175 C | 1200V XPTTM Gen 6 | Tube | |||
0In Stock | Tube | ||||||||||||||||
Mfr: IXGA48N60A3-TRL TTI: IXGA48N60A3-TRL IXYS Availability: 0In StockIGBTs RECT 300V 30A FAST RECOVERY | 0In Stock | Si | D2PAK-3 (TO-263-3) | SMD/SMT | Single | 600 V | 1.35 V | - 20 V, 20 V | 120 A | 300 W | - 55 C | + 150 C | Reel |
