IXYS - IGBTs
1,044 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Package / Case | Mounting Style | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Maximum Gate Emitter Voltage | Continuous Collector Current at 25 C | Pd - Power Dissipation | Minimum Operating Temperature | Maximum Operating Temperature | Series | Qualification | Packaging |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: IXYK110N120C4 TTI: IXYK110N120C4 IXYS Availability: 0In StockIGBTs XPT thin-wafer technology, 4th generation (Gen 4) Trench IGBT. Disc IGBT Gen 4 XPT TO264 | 0In Stock | Si | TO-264-3 | Through Hole | Single | 1.2 kV | 2.4 V | - 20 V, 20 V | 310 A | 1.36 kW | - 55 C | + 175 C | 1200V XPTTM Gen 8 | Tube | |||
0In Stock | Si | TO-247AD-3 | Through Hole | Single | 650 V | 1.8 V | - 20 V, 20 V | 170 A | 750 W | - 55 C | + 175 C | IXYH75N65 | Tube | ||||
0In Stock | Si | ISOPLUS i4-3 | Through Hole | Single | 3 kV | 2.8 V | - 20 V, 20 V | 40 A | 160 W | - 55 C | + 150 C | Very High Voltage | Tube | ||||
0In Stock | Si | TO-247AD-3 | Through Hole | Single | 1.2 kV | 2 V | - 20 V, 20 V | 75 A | 360 W | - 55 C | + 150 C | IXGH40N120 | Tube | ||||
0In Stock | Si | TO-247-PLUS-3 | Through Hole | Single | 600 V | 1.4 V | 20 V | 500 A | 1.7 kW | - 55 C | + 150 C | IXGX320N60 | Tube | ||||
0In Stock | Si | TO-247-3 | Through Hole | Single | 650 V | 2 V | - 20 V, 20 V | 123 A | 455 W | - 55 C | + 175 C | Trench | Tube | ||||
0In Stock | Si | TO-220FP-3 | Through Hole | Single | 600 V | 1.66 V | - 20 V, 20 V | 33 A | 90 W | - 55 C | + 175 C | Tube | |||||
0In Stock | Si | TO-263HV-2 | SMD/SMT | Single | 1.2 kV | 3.4 V | - 20 V, 20 V | 40 A | 278 W | - 55 C | + 175 C | Tube | |||||
0In Stock | Si | D3PAK-3 (TO-268-3) | SMD/SMT | Single | 1.2 kV | 3.4 V | - 20 V, 20 V | 36 A | 230 W | - 55 C | + 150 C | Tube | |||||
0In Stock | Si | TO-247-PLUS-3 | Through Hole | Single | 1.2 kV | 1.8 V | - 20 V, 20 V | 320 A | 1.5 kW | - 55 C | + 175 C | Tube | |||||
0In Stock | Si | TO-264-3 | Through Hole | Single | 300 V | 1.15 V | - 20 V, 20 V | 400 A | 1 kW | - 55 C | + 150 C | IXGK400N30 | Tube | ||||
Mfr: IXGK72N60B3H1 TTI: IXGK72N60B3H1 IXYS Availability: 0In StockIGBTs Mid-Frequency Range 15khz-40khz w/ Diode | 0In Stock | Si | TO-264-3 | Through Hole | 600 V | 600 V | 20 V | 75 A | 540 W | - 55 C | + 150 C | IXGK72N60 | Tube | ||||
0In Stock | Si | TO-247-PLUS-3 | Through Hole | Single | 1.7 kV | 2.5 V | - 20 V, 20 V | 170 A | 830 W | - 55 C | + 150 C | IXGX100N170 | Tube | ||||
0In Stock | Si | TO-247AD-3 | Through Hole | Single | 1.7 kV | 3.3 V | - 20 V, 20 V | 50 A | 250 W | - 55 C | + 150 C | IXGH24N170 | Tube | ||||
Mfr: IXYA8N90C3D1 TTI: IXYA8N90C3D1 IXYS Availability: 0In StockIGBTs 900V 8A 2.5V XPT IGBTs GenX3 w/ Diode | 0In Stock | Si | D2PAK-3 (TO-263-3) | SMD/SMT | Single | 900 V | 2.5 V | - 20 V, 20 V | 20 A | - 55 C | + 175 C | Planar | Tube | ||||
0In Stock | Si | TO-247-3 | Through Hole | Single | 650 V | 1.9 V | - 20 V, 20 V | 340 A | 1.2 kW | - 55 C | + 175 C | Trench | Tube | ||||
0In Stock | Si | TO-247AD-3 | Very High Voltage | Tube | |||||||||||||
0In Stock | Si | TO-247-3 | Through Hole | Single | 650 V | 2.3 V | - 20 V, 20 V | 260 A | 1.36 kW | - 55 C | + 175 C | Tube | |||||
0In Stock | TO-247HV-3 | Through Hole | Single | - 20 V, 20 V | 280 W | - 55 C | + 175 C | Tube | |||||||||
0In Stock | Si | TO-264-3 | Through Hole | Single | 650 V | 1.54 V | - 20 V, 20 V | 310 A | 940 W | - 55 C | + 175 C | Trench | Tube | ||||
0In Stock | Si | D3PAK-3 (TO-268-3) | SMD/SMT | Single | 1.7 kV | 3.4 V | - 20 V, 20 V | 20 A | 140 W | - 55 C | + 150 C | IXBT10N170 | Tube | ||||
0In Stock | Si | TO-247-PLUS-3 | Through Hole | - 20 V, 20 V | IXBX75N170 | Tube | |||||||||||
0In Stock | Tube | ||||||||||||||||
0In Stock | Si | TO-247AD | Through Hole | Single | 600 V | 2.2 V | - 20 V, 20 V | 190 A | 830 W | - 55 C | + 150 C | IXXH100N60 | Tube | ||||
0In Stock | Si | TO-247-3 | Through Hole | - 20 V, 20 V | IXXH75N60 | Tube |
