BIDW50N65 - Bourns - IGBTs
2 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Package / Case | Mounting Style | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Maximum Gate Emitter Voltage | Continuous Collector Current at 25 C | Pd - Power Dissipation | Minimum Operating Temperature | Maximum Operating Temperature | Series | Qualification | Packaging |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | TO-247-3 | Through Hole | Single | 650 V | 1.65 V | - 20 V, 20 V | 100 A | 416 W | - 55 C | + 150 C | BID | Tube | ||||
Not Available Online |
