GaN FETs
53 ResultsPart | Availability | Purchasing | RoHS/Lead | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Maximum Operating Frequency | Minimum Operating Frequency | Technology | Part # Aliases |
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Mfr: GANE011-080CBAZ TTI: Not Assigned Nexperia Availability: 0In StockGaN FETs GANE011-080CBA/SOT8134/WLCSP9 | 0In Stock | SMD/SMT | WLCSP-6 | N-Channel | 80 V | 27 A | 11 mOhms | - 4 V, + 6 V | 2.1 V | 2.2 nC | - 40 C | + 150 C | Enhancement | GaN | 934670834341 | ||||||||
Mfr: GNP2025TD-ZTR TTI: GNP2025TD-ZTR ROHM Semiconductor Availability: 0In StockGaN FETs EcoGaN, 650V 59.8A TOLL-8N, E-mode Gallium-Nitride(GaN) HEMT | 0In Stock | SMD/SMT | TOLL-8N | N-Channel | 1 Channel | 650 V | 59.8 A | 35 mOhms | - 10 V, + 6.5 V | 2.5 V | 13.2 nC | - 55 C | + 150 C | 291 W | Enhancement | GaN | |||||||
Mfr: BM3G115MUV-LBE2 TTI: BM3G115MUV-LBE2 ROHM Semiconductor Availability: 0In StockGaN FETs HEMT POWER STAGE IC | 0In Stock | SMD/SMT | VQFN-46 | 1 Channel | 650 V | 12.2 A | 195 mOhms | - 40 C | + 105 C | Enhancement | Nano Cap; EcoGaN | 2 MHz | GaN | ||||||||||
Mfr: GNP2070TD-ZTR TTI: GNP2070TD-ZTR ROHM Semiconductor Availability: 0In StockGaN FETs TOLL8N 650V 27A HEMT | 0In Stock | SMD/SMT | TOLL-8N | N-Channel | 1 Channel | 650 V | 27 A | 98 mOhms | - 10 V to + 6.5 V | 1.5 V | 5.2 nC | - 55 C | + 150 C | 159 W | Enhancement | GaN | |||||||
Mfr: BM3G107MUV-LBE2 TTI: BM3G107MUV-LBE2 ROHM Semiconductor Availability: 0In StockGaN FETs HEMT POWER STAGE IC | 0In Stock | SMD/SMT | VQFN-46 | 1 Channel | 650 V | 17.9 A | 100 mOhms | - 40 C | + 105 C | Enhancement | Nano Cap; EcoGaN | 2 MHz | |||||||||||
Mfr: GNP2050TEC-ZE2 TTI: GNP2050TEC-ZE2 ROHM Semiconductor Availability: 0In StockGaN FETs DFN 650V 33.8 HEMT | 0In Stock | SMD/SMT | DFN-8 | N-Channel | 1 Channel | 650 V | 33.8 A | 70 mOhms | - 10 V, 6.5 V | 2.5 V | 6.4 nC | - 55 C | + 150 C | 187 W | Enhancement | GaN HEMT | |||||||
Mfr: PGA26E19BA TTI: Not Assigned Panasonic Industry Availability: Not Available OnlineGaN FETs MOSFET 600VDC 190mohm X-GaN | Not Available Online | SMD/SMT | DFN-8 | N-Channel | 1 Channel | 600 V | 19 A | 140 mOhms | 1.2 V | 2 nC | - 55 C | + 150 C | 83 W | Enhancement | X-GaN | GaN | PGA26E19BA2 | ||||||
Not Available Online | SMD/SMT | DFN-8 | N-Channel | 1 Channel | 150 V | 10 A | 40 mOhms | - 2 V to 8 V | 1 V | 2 nC | + 150 C | Enhancement | GaN | ||||||||||
Not Available Online | SMD/SMT | DFN8080CK-8 | N-Channel | 1 Channel | 650 V | 14.5 A | 182 mOhms | - 10 V, + 6.5 V | 2.5 V | 2.8 nC | - 55 C | + 150 C | 91 W | Enhancement | GaN | ||||||||
Mfr: PGA26E07BA TTI: Not Assigned Panasonic Industry Availability: Not Available OnlineGaN FETs MOSFET 600VDC 70mohm X-GaN | Not Available Online | SMD/SMT | DFN-8 | 1 Channel | 600 V | 26 A | 70 mOhms | 5 nC | - 55 C | + 150 C | 96 W | X-GaN | GaN | PGA26E07BA2 | |||||||||
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Not Available Online | SMD/SMT | DFN-8 | N-Channel | 1 Channel | 150 V | 30 A | 8.5 mOhms | - 2 V to 8 V | 1 V | 7 nC | + 150 C | Enhancement | 10 MHz | GaN | |||||||||
TTI: Not Assigned Nexperia Availability: Not Available OnlineGaN FETs | Not Available Online | ||||||||||||||||||||||
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Not Available Online | SMD/SMT | DFN8080CK-8 | N-Channel | 1 Channel | 650 V | 27.2 A | 98 mOhms | - 10 V, + 6.5 V | 2.5 V | 4.7 nC | - 55 C | + 150 C | 169 W | Enhancement | GaN | ||||||||
Not Available Online | SMD/SMT | VQFN-46 | 1 Channel | 650 V | 68.8 A | 70 mOhms | - 40 C | + 105 C | Enhancement | Nano Cap; EcoGaN | 2 MHz | Si | |||||||||||
Mfr: GNP2050TD-ZTR TTI: Not Assigned ROHM Semiconductor Availability: Not Available OnlineGaN FETs EcoGaN, 650V 31.5A TOLL-8N, E-mode Gallium-Nitride(GaN) HEMT | Not Available Online | SMD/SMT | TOLL-8N | N-Channel | 1 Channel | 650 V | 31.5 A | 70 mOhms | - 10 V, + 6.5 V | 2.5 V | 6.4 nC | - 55 C | + 150 C | 159 W | Enhancement | GaN | |||||||
Not Available Online | GaN |
