650 V - Nexperia - GaN FETs
6 ResultsPart | Availability | Purchasing | RoHS/Lead | Manufacturer | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Part # Aliases |
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Mfr: GAN041-650WSBQ TTI: GAN041-650WSBQ Nexperia Availability: 67In StockGaN FETs SOT247 650V 47.2A N-CH MOSFET | 67In Stock | Nexperia | Through Hole | SOT-429-3 | N-Channel | 1 Channel | 650 V | 47.2 A | 41 mOhms | - 20 V, + 20 V | 4.5 V | 22 nC | - 55 C | + 175 C | 187 W | Enhancement | 934661752127 | ||||
Mfr: GAN111-650WSBQ TTI: Not Assigned Nexperia Availability: 0In StockGaN FETs GAN111-650WSB/SOT429 /TO-247 | 0In Stock | Nexperia | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 21 A | 97 mOhms | + 20 V | 4.8 V | 4.9 nC | - 55 C | + 175 C | 107 W | Enhancement | 934666222127 | ||||
0In Stock | Nexperia | SMD/SMT | CCPAK1212-13 | N-Channel | 1 Channel | 650 V | 60 A | 39 mOhms | - 20 V, + 20 V | 4.8 V | 30 nC | - 55 C | + 175 C | 300 W | Enhancement | 934662151128 | |||||
0In Stock | Nexperia | SMD/SMT | DFN-5 | P-Channel | 1 Channel | 650 V | 6 A | 350 mOhms | 7 V | 2.5 V | 1.5 nC | - 55 C | + 150 C | 65 W | Enhancement | 934667638332 | |||||
0In Stock | Nexperia | SMD/SMT | CCPAK1212i-12 | N-Channel | 1 Channel | 650 V | 58.5 A | 33 mOhms | + 20 V | 4.6 V | 26 nC | - 55 C | + 150 C | 250 W | Enhancement | 934662153118 | |||||
Mfr: GAN039-650NTBZ TTI: Not Assigned Nexperia Availability: Not Available OnlineGaN FETs The factory is currently not accepting orders for this product. | Not Available Online | Nexperia | SMD/SMT | CCPAK1212i-13 | N-Channel | 1 Channel | 650 V | 58.5 A | 39 mOhms | - 20 V, + 20 V | 4 V | 26 nC | - 55 C | + 150 C | 250 W | Enhancement | 934662153139 |
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