GAN041-650WSB - Nexperia - GaN FETs
1 ResultsPart | Availability | Purchasing | RoHS/Lead | Manufacturer | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Part # Aliases |
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Mfr: GAN041-650WSBQ TTI: GAN041-650WSBQ Nexperia Availability: 67In StockGaN FETs SOT247 650V 47.2A N-CH MOSFET | 67In Stock | Nexperia | Through Hole | SOT-429-3 | N-Channel | 1 Channel | 650 V | 47.2 A | 41 mOhms | - 20 V, + 20 V | 4.5 V | 22 nC | - 55 C | + 175 C | 187 W | Enhancement | 934661752127 |