GAN039-650NBB - Nexperia - GaN FETs
1 ResultsPart | Availability | Purchasing | RoHS/Lead | Manufacturer | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Nexperia | SMD/SMT | CCPAK1212-13 | N-Channel | 1 Channel | 650 V | 60 A | 39 mOhms | - 20 V, + 20 V | 4.8 V | 30 nC | - 55 C | + 175 C | 300 W | Enhancement | 934662151128 |