DFN - Nexperia - GaN FETs
1 ResultsPart | Availability | Purchasing | RoHS/Lead | Manufacturer | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Nexperia | SMD/SMT | DFN-5 | P-Channel | 1 Channel | 650 V | 6 A | 350 mOhms | 7 V | 2.5 V | 1.5 nC | - 55 C | + 150 C | 65 W | Enhancement | 934667638332 |