DFN - Nexperia - GaN FETs
1 ResultsPart | Availability | Purchasing | RoHS/Lead | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Maximum Operating Frequency | Minimum Operating Frequency | Technology | Part # Aliases |
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Mfr: GANE350-650FBAZ TTI: Not Assigned Nexperia Availability: 0In StockGaN FETs GANE350-650FBA/SOT8075/DFN5060 | 0In Stock | SMD/SMT | DFN-5 | P-Channel | 1 Channel | 650 V | 6 A | 350 mOhms | 7 V | 2.5 V | 1.5 nC | - 55 C | + 150 C | 65 W | Enhancement | GaN | 934667638332 |