SMD - HN1A01 - Bipolar Transistors - BJT
6 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Configuration | Maximum DC Collector Current | Collector- Emitter Voltage VCEO Max | Collector- Base Voltage VCBO | Emitter- Base Voltage VEBO | Collector-Emitter Saturation Voltage | Pd - Power Dissipation | Gain Bandwidth Product fT | Minimum Operating Temperature | Maximum Operating Temperature | Qualification | Series | Packaging |
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Mfr: HN1A01FU-GR,LF TTI: HN1A01FU-GR,LF Toshiba Availability: 0In StockBipolar Transistors - BJT Transistor for Low Freq Sm-Signal Amp | 0In Stock | Si | SMD/SMT | PNP | Dual | 150 mA | 50 V | 50 V | 5 V | 100 mV | 200 mW | 80 MHz | + 125 C | AEC-Q101 | HN1A01 | Reel | ||||
Mfr: HN1A01FU-Y,LF TTI: HN1A01FU-Y,LF Toshiba Availability: 0In StockBipolar Transistors - BJT US6 PLN TRANSISTOR Pd=200mW F=1MHz | 0In Stock | Si | SMD/SMT | US-6 | PNP | Dual | 150 mA | 50 V | 50 V | 5 V | 100 mV | 200 mW | 80 MHz | + 125 C | AEC-Q101 | HN1A01 | Reel | |||
Mfr: HN1A01FE-GR,LF TTI: Not Assigned Toshiba Availability: 0In StockBipolar Transistors - BJT Bias Resistor Built-in transistor | 0In Stock | Si | SMD/SMT | ES6-6 | PNP | 150 mA | 50 V | 50 V | 5 V | 300 mV | 100 mW | 80 MHz | AEC-Q101 | HN1A01 | Reel | |||||
0In Stock | Si | SMD/SMT | ES6-6 | PNP | Dual | 150 mA | 50 V | 50 V | 5 V | 100 mV | 100 mW | 80 MHz | + 150 C | AEC-Q101 | HN1A01 | Reel | ||||
Mfr: HN1A01F-GR(TE85L,F TTI: Not Assigned Toshiba Availability: 0In StockBipolar Transistors - BJT Dual Trans PNP x 2 SM6, -50V, -0.15A | 0In Stock | Si | SMD/SMT | SM-6 | PNP | Dual | 150 mA | 50 V | 50 V | 5 V | 100 mV | 300 mW | 80 MHz | + 125 C | HN1A01 | Reel | ||||
Mfr: HN1A01F-Y(TE85L,F) TTI: Not Assigned Toshiba Availability: 0In StockBipolar Transistors - BJT Dual Trans PNP x 2 SM6, -50V, -0.15A | 0In Stock | Si | SMD/SMT | SOT-26-6 | PNP | Dual | 150 mA | 50 V | 50 V | 5 V | 100 mV | 300 mW | 80 MHz | + 125 C | HN1A01 | Reel |
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- + $7.00 Per Reel