SMD - 2SA1182 - Bipolar Transistors - BJT
2 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Configuration | Maximum DC Collector Current | Collector- Emitter Voltage VCEO Max | Collector- Base Voltage VCBO | Emitter- Base Voltage VEBO | Collector-Emitter Saturation Voltage | Pd - Power Dissipation | Gain Bandwidth Product fT | Minimum Operating Temperature | Maximum Operating Temperature | Qualification | Series | Packaging |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: 2SA1182-GR,LF TTI: 2SA1182-GR,LF Toshiba Availability: 0In StockBipolar Transistors - BJT TRANS-SS PNP SOT23 30V | 0In Stock | Si | SMD/SMT | SC-59-3 | PNP | Single | 500 mA | 30 V | 35 V | 5 V | 100 mV | 150 mW | 200 MHz | + 125 C | AEC-Q101 | 2SA1182 | Reel | |||
Mfr: 2SA1182-Y,LF TTI: Not Assigned Toshiba Availability: 0In StockBipolar Transistors - BJT Bias Resistor Built-in transistor | 0In Stock | Si | SMD/SMT | TO-236MOD-3 | PNP | Single | 500 mA | 30 V | 35 V | 5 V | 100 mV | 150 mW | 200 MHz | + 125 C | AEC-Q101 | 2SA1182 | Reel |