SMD - 2SA1163 - Bipolar Transistors - BJT
2 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Configuration | Maximum DC Collector Current | Collector- Emitter Voltage VCEO Max | Collector- Base Voltage VCBO | Emitter- Base Voltage VEBO | Collector-Emitter Saturation Voltage | Pd - Power Dissipation | Gain Bandwidth Product fT | Minimum Operating Temperature | Maximum Operating Temperature | Qualification | Series | Packaging |
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Mfr: 2SA1163-BL,LF TTI: 2SA1163-BL,LF Toshiba Availability: 0In StockBipolar Transistors - BJT Transistor for Low Freq. Amplification | 0In Stock | Si | SMD/SMT | TO-236-3 | PNP | Single | 100 mA | 120 V | 120 V | 5 V | 300 mV | 150 mW | 100 MHz | + 125 C | AEC-Q101 | 2SA1163 | Reel | |||
Mfr: 2SA1163-GR,LF TTI: Not Assigned Toshiba Availability: 0In StockBipolar Transistors - BJT 120V 100MA PNP TRANSISTOR | 0In Stock | Si | SMD/SMT | PNP | Single | 100 mA | 120 V | 120 V | 5 V | 300 mV | 150 mW | 100 MHz | + 125 C | AEC-Q101 | 2SA1163 | Reel |