TTD1409B - Toshiba - Bipolar Transistors - BJT
2 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Configuration | Maximum DC Collector Current | Collector- Emitter Voltage VCEO Max | Collector- Base Voltage VCBO | Emitter- Base Voltage VEBO | Collector-Emitter Saturation Voltage | Pd - Power Dissipation | Gain Bandwidth Product fT | Minimum Operating Temperature | Maximum Operating Temperature | Qualification | Series | Packaging |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: TTD1409B,S4X TTI: Not Assigned Toshiba Availability: 0In StockBipolar Transistors - BJT Silicon NPN Triple-Diffused Type Bipolar Transistors | 0In Stock | Through Hole | TO-126N-3 | NPN | Single | 6 A | 400 V | 600 V | 5 V | 2 V | 2 W | + 150 C | TTD1409B | Tube | ||||||
Mfr: TTD1409BS4X(S TTI: Not Assigned Toshiba Availability: Not Available OnlineBipolar Transistors - BJT | Not Available Online | Through Hole | TO-126N-3 | NPN | Single | 4 A | 80 V | 160 V | 7 V | 300 mV | 150 MHz | - 55 C | + 150 C | TTD1409B |
