TTA008B - Toshiba - Bipolar Transistors - BJT
3 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Configuration | Maximum DC Collector Current | Collector- Emitter Voltage VCEO Max | Collector- Base Voltage VCBO | Emitter- Base Voltage VEBO | Collector-Emitter Saturation Voltage | Pd - Power Dissipation | Gain Bandwidth Product fT | Minimum Operating Temperature | Maximum Operating Temperature | Qualification | Series | Packaging |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | Through Hole | TO-126N-3 | PNP | Single | 4 A | 80 V | 80 V | 7 V | 300 mV | 1.5 W | 100 MHz | + 150 C | TTA008B | Tray | |||||
Not Available Online | Si | Through Hole | TO-126N-3 | PNP | Single | 4 A | 80 V | 80 V | 7 V | 300 mV | 1.5 W | - 55 C | + 150 C | TTA008B | ||||||
Not Available Online | Si | Through Hole | TO-126N-3 | PNP | Single | 4 A | 80 V | 80 V | 7 V | 300 mV | 1.5 W | - 55 C | + 150 C | TTA008B |
