TTA0002 - Toshiba - Bipolar Transistors - BJT
1 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Configuration | Maximum DC Collector Current | Collector- Emitter Voltage VCEO Max | Collector- Base Voltage VCBO | Emitter- Base Voltage VEBO | Collector-Emitter Saturation Voltage | Pd - Power Dissipation | Gain Bandwidth Product fT | Minimum Operating Temperature | Maximum Operating Temperature | Qualification | Series | Packaging |
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Mfr: TTA0002(Q) TTI: Not Assigned Toshiba Availability: 0In StockBipolar Transistors - BJT BJT PNP -18A 180W 80 HFE -2V Trans | 0In Stock | Si | Through Hole | 2-21F1A-3 | PNP | Single | 18 A | 160 V | 160 V | 5 V | 2 V | 180 W | 30 MHz | + 150 C | TTA0002 | Tray |