TMBT3906 - Toshiba - Bipolar Transistors - BJT
1 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Configuration | Maximum DC Collector Current | Collector- Emitter Voltage VCEO Max | Collector- Base Voltage VCBO | Emitter- Base Voltage VEBO | Collector-Emitter Saturation Voltage | Pd - Power Dissipation | Gain Bandwidth Product fT | Minimum Operating Temperature | Maximum Operating Temperature | Qualification | Series | Packaging |
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Mfr: TMBT3906,LM TTI: TMBT3906,LM Toshiba Availability: 0In StockBipolar Transistors - BJT Transistor for Low Freq. Amplification | 0In Stock | Si | SMD/SMT | SOT-23-3 | PNP | Single | 150 mA | 50 V | 50 V | 5 V | 400 mV | 1 W | 250 MHz | + 150 C | TMBT3906 | Reel |