TBC8X7 - Toshiba - Bipolar Transistors - BJT
2 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Configuration | Maximum DC Collector Current | Collector- Emitter Voltage VCEO Max | Collector- Base Voltage VCBO | Emitter- Base Voltage VEBO | Collector-Emitter Saturation Voltage | Pd - Power Dissipation | Gain Bandwidth Product fT | Minimum Operating Temperature | Maximum Operating Temperature | Qualification | Series | Packaging |
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Mfr: TBC847B,LM TTI: TBC847B,LM Toshiba Availability: 0In StockBipolar Transistors - BJT BJT NPN 0.15A 50V | 0In Stock | Si | SMD/SMT | SOT-23-3 | NPN | Single | 150 mA | 50 V | 60 V | 6 V | 170 mV | 320 mW | 100 MHz | + 150 C | TBC8X7 | Reel | ||||
Mfr: TBC857B,LM TTI: Not Assigned Toshiba Availability: 0In StockBipolar Transistors - BJT BJT PNP -0.15A -50V | 0In Stock | Si | SMD/SMT | SOT-23-3 | PNP | Single | 150 mA | 50 V | 50 V | 5 V | 220 mV | 320 mW | 80 MHz | + 150 C | TBC8X7 | Reel |