RN1901 - Toshiba - Bipolar Transistors - BJT
1 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Configuration | Maximum DC Collector Current | Collector- Emitter Voltage VCEO Max | Collector- Base Voltage VCBO | Emitter- Base Voltage VEBO | Collector-Emitter Saturation Voltage | Pd - Power Dissipation | Gain Bandwidth Product fT | Minimum Operating Temperature | Maximum Operating Temperature | Qualification | Series | Packaging |
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Mfr: RN1901,LF(CT TTI: RN1901,LF(CT Toshiba Availability: 0In StockBipolar Transistors - BJT Bias Resistor Built- in Transistor, 2in1 | 0In Stock | Si | SMD/SMT | SOT-363-6 | NPN | Single | 100 mA | 50 V | 50 V | 10 V | 100 mV | 200 mW | 250 MHz | - 55 C | + 150 C | RN1901 | Reel |