KSC2330 - Toshiba - Bipolar Transistors - BJT
3 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Configuration | Maximum DC Collector Current | Collector- Emitter Voltage VCEO Max | Collector- Base Voltage VCBO | Emitter- Base Voltage VEBO | Collector-Emitter Saturation Voltage | Pd - Power Dissipation | Gain Bandwidth Product fT | Minimum Operating Temperature | Maximum Operating Temperature | Qualification | Series | Packaging |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: KSC2330RTA_Q TTI: Not Assigned Toshiba Availability: Not Available OnlineBipolar Transistors - BJT | Not Available Online | Si | NPN | Single | 100 mA | 300 V | 300 V | 7 V | 1 W | 50 MHz | - 55 C | + 150 C | KSC2330 | |||||||
Not Available Online | Si | NPN | Single | 100 mA | 300 V | 300 V | 7 V | 1 W | 50 MHz | - 55 C | + 150 C | KSC2330 | ||||||||
Not Available Online | Si | NPN | Single | 100 mA | 300 V | 300 V | 7 V | 1 W | 50 MHz | - 55 C | + 150 C | KSC2330 |
