HN7G09 - Toshiba - Bipolar Transistors - BJT
2 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Configuration | Maximum DC Collector Current | Collector- Emitter Voltage VCEO Max | Collector- Base Voltage VCBO | Emitter- Base Voltage VEBO | Collector-Emitter Saturation Voltage | Pd - Power Dissipation | Gain Bandwidth Product fT | Minimum Operating Temperature | Maximum Operating Temperature | Qualification | Series | Packaging |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: HN7G09FE(TE85L,F) TTI: Not Assigned Toshiba Availability: Not Available OnlineBipolar Transistors - BJT Vceo=50V Vds=30V Ic=100mA Id=100mA | Not Available Online | Si | SMD/SMT | ES6-6 | NPN | Dual | 50 V | 50 V | 10 V | 100 mW | 250 MHz | HN7G09 | Reel | |||||||
Not Available Online | Si | HN7G09 |
