HN7G02 - Toshiba - Bipolar Transistors - BJT
2 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Configuration | Maximum DC Collector Current | Collector- Emitter Voltage VCEO Max | Collector- Base Voltage VCBO | Emitter- Base Voltage VEBO | Collector-Emitter Saturation Voltage | Pd - Power Dissipation | Gain Bandwidth Product fT | Minimum Operating Temperature | Maximum Operating Temperature | Qualification | Series | Packaging |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: HN7G02FE(TE85L,F) TTI: Not Assigned Toshiba Availability: Not Available OnlineBipolar Transistors - BJT Vceo=-50V Vds20V Ic=-100ma Id=50mA | Not Available Online | Si | Through Hole | ES6-6 | PNP | Dual | 50 V | 50 V | 5 V | 100 mW | HN7G02 | Reel | ||||||||
Mfr: HN7G02FU(TE85L,F) TTI: Not Assigned Toshiba Availability: Not Available OnlineBipolar Transistors - BJT Vceo=-50V Vds=20V Ic=-100mA Id=50mA | Not Available Online | Si | + 150 C | HN7G02 |
