HN4B102 - Toshiba - Bipolar Transistors - BJT
2 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Configuration | Maximum DC Collector Current | Collector- Emitter Voltage VCEO Max | Collector- Base Voltage VCBO | Emitter- Base Voltage VEBO | Collector-Emitter Saturation Voltage | Pd - Power Dissipation | Gain Bandwidth Product fT | Minimum Operating Temperature | Maximum Operating Temperature | Qualification | Series | Packaging |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | SMD/SMT | SOT-25-5 | NPN, PNP | Dual | 8 A | 30 V | 60 V, 30 V | 7 V | 1.1 W | - 55 C | + 150 C | HN4B102 | Reel | |||||||
Not Available Online | SMD/SMT | SOT-25-5 | NPN, PNP | Dual | 8 A | 30 V | 60 V, 30 V | 7 V | - 55 C | + 150 C | HN4B102 |