HN4B04 - Toshiba - Bipolar Transistors - BJT
1 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Configuration | Maximum DC Collector Current | Collector- Emitter Voltage VCEO Max | Collector- Base Voltage VCBO | Emitter- Base Voltage VEBO | Collector-Emitter Saturation Voltage | Pd - Power Dissipation | Gain Bandwidth Product fT | Minimum Operating Temperature | Maximum Operating Temperature | Qualification | Series | Packaging |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: HN4B04J(TE85L,F) TTI: Not Assigned Toshiba Availability: Not Available OnlineBipolar Transistors - BJT Trans LFreq -120V PNP PNP -0.1A | Not Available Online | Si | SMD/SMT | SOT-25-5 | NPN, PNP | Dual | 500 mA | 30 V | 35 V | 5 V | 100 mV | 300 mW | 200 MHz, 300 MHz | HN4B04 | Reel |