HN4A06 - Toshiba - Bipolar Transistors - BJT
1 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Configuration | Maximum DC Collector Current | Collector- Emitter Voltage VCEO Max | Collector- Base Voltage VCBO | Emitter- Base Voltage VEBO | Collector-Emitter Saturation Voltage | Pd - Power Dissipation | Gain Bandwidth Product fT | Minimum Operating Temperature | Maximum Operating Temperature | Qualification | Series | Packaging |
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Mfr: HN4A06J(TE85L,F) TTI: Not Assigned Toshiba Availability: 0In StockBipolar Transistors - BJT Trans LFreq -120V PNP PNP -0.1A | 0In Stock | Si | SMD/SMT | SOT-25-5 | PNP | Dual | 100 mA | 120 V | 120 V | 5 V | 300 mV | 300 mW | 100 MHz | + 150 C | HN4A06 | Reel |