HN3C51 - Toshiba - Bipolar Transistors - BJT
2 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Configuration | Maximum DC Collector Current | Collector- Emitter Voltage VCEO Max | Collector- Base Voltage VCBO | Emitter- Base Voltage VEBO | Collector-Emitter Saturation Voltage | Pd - Power Dissipation | Gain Bandwidth Product fT | Minimum Operating Temperature | Maximum Operating Temperature | Qualification | Series | Packaging |
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Mfr: HN3C51F-BL(TE85L,F TTI: Not Assigned Toshiba Availability: Not Available OnlineBipolar Transistors - BJT Trans LFreq 120V NPN NPN 0.1A | Not Available Online | Si | SMD/SMT | SOT-26-6 | NPN | Dual | 100 mA | 120 V | 120 V | 5 V | 300 mV | 300 mW | 100 MHz | HN3C51 | Reel | |||||
Mfr: HN3C51F-GR(TE85L,F TTI: Not Assigned Toshiba Availability: Not Available OnlineBipolar Transistors - BJT Trans LFreq 120V NPN NPN 0.1A | Not Available Online | Si | SMD/SMT | SOT-26-6 | NPN | Dual | 100 mA | 120 V | 120 V | 5 V | 300 mV | 300 mW | 100 MHz | HN3C51 | Reel |