HN3C10 - Toshiba - Bipolar Transistors - BJT
2 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Configuration | Maximum DC Collector Current | Collector- Emitter Voltage VCEO Max | Collector- Base Voltage VCBO | Emitter- Base Voltage VEBO | Collector-Emitter Saturation Voltage | Pd - Power Dissipation | Gain Bandwidth Product fT | Minimum Operating Temperature | Maximum Operating Temperature | Qualification | Series | Packaging |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: HN3C10FUTE85LF TTI: Not Assigned Toshiba Availability: Not Available OnlineBipolar Transistors - BJT Transistor Lo Freq Small-Signal Amp | Not Available Online | Si | SMD/SMT | SOT-26-6 | HN3C10 | Reel | ||||||||||||||
Mfr: HN3C10FU (TE85L) TTI: Not Assigned Toshiba Availability: Not Available OnlineBipolar Transistors - BJT | Not Available Online | Si | SMD/SMT | 2-2J1A | NPN | Dual | 80 mA | 12 V | 20 V | 3 V | 200 mW | 7 GHz | - 55 C | + 125 C | HN3C10 |
