HN2C01 - Toshiba - Bipolar Transistors - BJT
2 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Configuration | Maximum DC Collector Current | Collector- Emitter Voltage VCEO Max | Collector- Base Voltage VCBO | Emitter- Base Voltage VEBO | Collector-Emitter Saturation Voltage | Pd - Power Dissipation | Gain Bandwidth Product fT | Minimum Operating Temperature | Maximum Operating Temperature | Qualification | Series | Packaging |
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Mfr: HN2C01FEYTE85LF TTI: Not Assigned Toshiba Availability: Not Available OnlineBipolar Transistors - BJT Trans LFreq 50V NPN NPN 0.15A | Not Available Online | Si | SMD/SMT | SOT-563-6 | NPN | Dual | 150 mA | 50 V | 60 V | 5 V | 100 mV | 100 mW | 60 MHz | HN2C01 | Reel | |||||
Mfr: HN2C01FU-GR(T5L,F) TTI: Not Assigned Toshiba Availability: Not Available OnlineBipolar Transistors - BJT Dual Trans NPN x 2 50V, 0.15A US6 | Not Available Online | Si | SMD/SMT | US-6 | NPN | Dual | 150 mA | 50 V | 60 V | 5 V | 100 mV | 200 mW | 80 MHz | + 125 C | HN2C01 | Reel |