HN2A01 - Toshiba - Bipolar Transistors - BJT
2 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Configuration | Maximum DC Collector Current | Collector- Emitter Voltage VCEO Max | Collector- Base Voltage VCBO | Emitter- Base Voltage VEBO | Collector-Emitter Saturation Voltage | Pd - Power Dissipation | Gain Bandwidth Product fT | Minimum Operating Temperature | Maximum Operating Temperature | Qualification | Series | Packaging |
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Mfr: HN2A01FU-Y(TE85L,F TTI: Not Assigned Toshiba Availability: 0In StockBipolar Transistors - BJT Dual Trans PNP x 2 US6, -50V, -0.15A | 0In Stock | Si | SMD/SMT | US-6 | PNP | Dual | 150 mA | 50 V | 50 V | 5 V | 100 mV | 200 mW | 80 MHz | + 125 C | HN2A01 | Reel | ||||
Mfr: HN2A01FU-GR(TE85LF TTI: Not Assigned Toshiba Availability: Not Available OnlineBipolar Transistors - BJT Trans LFreq -50V PNP PNP -0.15A | Not Available Online | Si | SMD/SMT | SOT-363-6 | PNP | Dual | 150 mA | 50 V | 50 V | 5 V | 100 mV | 200 mW | 80 MHz | + 125 C | HN2A01 | Reel |