HN1C03 - Toshiba - Bipolar Transistors - BJT
5 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Configuration | Maximum DC Collector Current | Collector- Emitter Voltage VCEO Max | Collector- Base Voltage VCBO | Emitter- Base Voltage VEBO | Collector-Emitter Saturation Voltage | Pd - Power Dissipation | Gain Bandwidth Product fT | Minimum Operating Temperature | Maximum Operating Temperature | Qualification | Series | Packaging |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | SMD/SMT | SMT-6 | NPN | Single | 300 mA | 20 V | 50 V | 20 V | 42 mV | 200 mW | 30 MHz | - 55 C | + 150 C | HN1C03 | Reel | ||||
Mfr: HN1C03FU-B(TE85L,F TTI: Not Assigned Toshiba Availability: 0In StockBipolar Transistors - BJT Dual Trans NPN x 2 20V, 0.3A, US6 | 0In Stock | Si | SMD/SMT | US-6 | NPN | Dual | 300 mA | 20 V | 50 V | 25 V | 42 mV | 200 mW | 30 MHz | + 150 C | HN1C03 | Reel | ||||
Mfr: HN1C03F-B(TE85L,F) TTI: Not Assigned Toshiba Availability: 0In StockBipolar Transistors - BJT Dual Trans NPN x 2 20V, 0.3A, SM6 | 0In Stock | Si | SMD/SMT | SOT-26-6 | NPN | Dual | 300 mA | 20 V | 50 V | 25 V | 42 mV | 300 mW | 30 MHz | + 150 C | HN1C03 | Reel | ||||
0In Stock | Si | SMD/SMT | US-6 | NPN | Dual | 300 mA | 20 V | 50 V | 25 V | 42 mV | 200 mW | 30 MHz | + 150 C | AEC-Q101 | HN1C03 | Reel | ||||
Mfr: HN1C03FU-B,LF(B TTI: Not Assigned Toshiba Availability: Not Available OnlineBipolar Transistors - BJT | Not Available Online | Si | HN1C03 |
