HN1B04FU - Toshiba - Bipolar Transistors - BJT
1 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Configuration | Maximum DC Collector Current | Collector- Emitter Voltage VCEO Max | Collector- Base Voltage VCBO | Emitter- Base Voltage VEBO | Collector-Emitter Saturation Voltage | Pd - Power Dissipation | Gain Bandwidth Product fT | Minimum Operating Temperature | Maximum Operating Temperature | Qualification | Series | Packaging |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: HN1B04FU-Y,LF TTI: HN1B04FU-Y,LF Toshiba Availability: 0In StockBipolar Transistors - BJT LF Transistor +/-.15A +/-50V | 0In Stock | Si | SMD/SMT | SOT-363-6 | NPN, PNP | Dual | 150 mA | 50 V | 60 V, 50 V | 5 V | 100 mV | 200 mW | 150 MHz, 120 MHz | + 125 C | AEC-Q101 | HN1B04FU | Reel |