HN1B01 - Toshiba - Bipolar Transistors - BJT
4 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Configuration | Maximum DC Collector Current | Collector- Emitter Voltage VCEO Max | Collector- Base Voltage VCBO | Emitter- Base Voltage VEBO | Collector-Emitter Saturation Voltage | Pd - Power Dissipation | Gain Bandwidth Product fT | Minimum Operating Temperature | Maximum Operating Temperature | Qualification | Series | Packaging |
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Mfr: HN1B01F-Y(TE85L,F) TTI: Not Assigned Toshiba Availability: 0In StockBipolar Transistors - BJT Dual Trans PNP NPN SM6, -50V, -0.15A | 0In Stock | Si | SMD/SMT | SM-6 | NPN, PNP | Dual | 150 mA | 50 V | 50 V | 5 V | 100 mV | 300 mW | 80 MHz | - 55 C | + 125 C | HN1B01 | Reel | |||
Mfr: HN1B01F-GR(TE85L,F TTI: Not Assigned Toshiba Availability: 0In StockBipolar Transistors - BJT Dual Trans PNP NPN SM6, -50V, -0.15A | 0In Stock | Si | SMD/SMT | SM-6 | NPN, PNP | Dual | 150 mA | 50 V | 60 V, 50 V | 5 V | 100 mV | 300 mW | 150 MHz, 120 MHz | + 125 C | HN1B01 | Reel | ||||
Mfr: HN1B01FU-GR,LF TTI: Not Assigned Toshiba Availability: 0In StockBipolar Transistors - BJT Transistor for Low Freq Sm-Signal Amp | 0In Stock | Si | SMD/SMT | SOT-363-6 | NPN, PNP | Dual | 150 mA | 50 V | 60 V, 50 V | 5 V | 100 mV | 200 mW | 150 MHz, 120 MHz | + 125 C | AEC-Q101 | HN1B01 | Reel | |||
Mfr: HN1B01FUGRLFT TTI: Not Assigned Toshiba Availability: Not Available OnlineBipolar Transistors - BJT VCEO 50V IC 150mA HFE 120 - 400 150mA | Not Available Online | Si | HN1B01 | Reel |
