2SD1407A - Toshiba - Bipolar Transistors - BJT
2 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Configuration | Maximum DC Collector Current | Collector- Emitter Voltage VCEO Max | Collector- Base Voltage VCBO | Emitter- Base Voltage VEBO | Collector-Emitter Saturation Voltage | Pd - Power Dissipation | Gain Bandwidth Product fT | Minimum Operating Temperature | Maximum Operating Temperature | Qualification | Series | Packaging |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: 2SD1407A-Y(F) TTI: Not Assigned Toshiba Availability: Not Available OnlineBipolar Transistors - BJT NPN 100V 5A Transistor | Not Available Online | Si | Through Hole | TO-220FP-3 | NPN | Single | 5 A | 100 V | 100 V | 5 V | 30 W | 12 MHz | - 55 C | + 150 C | 2SD1407A | |||||
Mfr: 2SD1407A-O(F) TTI: Not Assigned Toshiba Availability: Not Available OnlineBipolar Transistors - BJT | Not Available Online | Si | Through Hole | TO-220-3 FP | NPN | Single | 5 A | 100 V | 100 V | 5 V | 30 W | 12 MHz | - 55 C | + 150 C | 2SD1407A |