2SC5712 - Toshiba - Bipolar Transistors - BJT
1 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Configuration | Maximum DC Collector Current | Collector- Emitter Voltage VCEO Max | Collector- Base Voltage VCBO | Emitter- Base Voltage VEBO | Collector-Emitter Saturation Voltage | Pd - Power Dissipation | Gain Bandwidth Product fT | Minimum Operating Temperature | Maximum Operating Temperature | Qualification | Series | Packaging |
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Mfr: 2SC5712(TE12L,F) TTI: Not Assigned Toshiba Availability: 0In StockBipolar Transistors - BJT NPN 100V VCBO 50V VCEO 3A IC | 0In Stock | Si | Through Hole | NPN | 3 A | 50 V | 100 V | 7 V | 140 mV | 1 W | 2SC5712 | Reel |