2SC5354 - Toshiba - Bipolar Transistors - BJT
1 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Configuration | Maximum DC Collector Current | Collector- Emitter Voltage VCEO Max | Collector- Base Voltage VCBO | Emitter- Base Voltage VEBO | Collector-Emitter Saturation Voltage | Pd - Power Dissipation | Gain Bandwidth Product fT | Minimum Operating Temperature | Maximum Operating Temperature | Qualification | Series | Packaging |
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Mfr: 2SC5354-1(F) TTI: Not Assigned Toshiba Availability: 0In StockBipolar Transistors - BJT Transistor NPN 800V 5A | 0In Stock | Si | Through Hole | TO-3P-N-3 | NPN | Single | 5 A | 800 V | 900 V | 7 V | 1 V | 100 W | + 150 C | 2SC5354 |