2SC5322 - Toshiba - Bipolar Transistors - BJT
1 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Configuration | Maximum DC Collector Current | Collector- Emitter Voltage VCEO Max | Collector- Base Voltage VCBO | Emitter- Base Voltage VEBO | Collector-Emitter Saturation Voltage | Pd - Power Dissipation | Gain Bandwidth Product fT | Minimum Operating Temperature | Maximum Operating Temperature | Qualification | Series | Packaging |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: 2SC5322 (TE85L) TTI: Not Assigned Toshiba Availability: Not Available OnlineBipolar Transistors - BJT | Not Available Online | Si | SMD/SMT | ESM-3 | NPN | Single | 10 mA | 5 V | 8 V | 1.5 V | 100 mW | 9 GHz | - 55 C | + 125 C | 2SC5322 |
