2SC2655 - Toshiba - Bipolar Transistors - BJT
1 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Configuration | Maximum DC Collector Current | Collector- Emitter Voltage VCEO Max | Collector- Base Voltage VCBO | Emitter- Base Voltage VEBO | Collector-Emitter Saturation Voltage | Pd - Power Dissipation | Gain Bandwidth Product fT | Minimum Operating Temperature | Maximum Operating Temperature | Qualification | Series | Packaging |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: 2SC2655-Y(TE6,F,M) TTI: Not Assigned Toshiba Availability: Not Available OnlineBipolar Transistors - BJT NPN VCE 0.5V 900mW VCEO 50V tstg 1.0 | Not Available Online | Si | Through Hole | TO-92-3 | NPN | Single | 2 A | 50 V | 50 V | 5 V | 500 mV | 900 mW | 100 MHz | - 55 C | + 150 C | 2SC2655 | Tube |