2SA2182 - Toshiba - Bipolar Transistors - BJT
2 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Configuration | Maximum DC Collector Current | Collector- Emitter Voltage VCEO Max | Collector- Base Voltage VCBO | Emitter- Base Voltage VEBO | Collector-Emitter Saturation Voltage | Pd - Power Dissipation | Gain Bandwidth Product fT | Minimum Operating Temperature | Maximum Operating Temperature | Qualification | Series | Packaging |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: 2SA2182(Q) TTI: Not Assigned Toshiba Availability: Not Available OnlineBipolar Transistors - BJT PNP 230V 1A Transistor | Not Available Online | Si | Through Hole | TO-220-3 FP | PNP | Single | 1 A | 230 V | 230 V | 5 V | 2 W | 80 MHz | - 55 C | + 150 C | 2SA2182 | Bulk | ||||
Mfr: 2SA2182(STA4,Q) TTI: Not Assigned Toshiba Availability: Not Available OnlineBipolar Transistors - BJT PNP 230V 1A Transistor | Not Available Online | Si | TO-220SIS | PNP | Single | 1 A | 230 V | 230 V | 5 V | 2 W | 80 MHz | - 55 C | + 150 C | 2SA2182 |