2SA1962 - Toshiba - Bipolar Transistors - BJT
3 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Configuration | Maximum DC Collector Current | Collector- Emitter Voltage VCEO Max | Collector- Base Voltage VCBO | Emitter- Base Voltage VEBO | Collector-Emitter Saturation Voltage | Pd - Power Dissipation | Gain Bandwidth Product fT | Minimum Operating Temperature | Maximum Operating Temperature | Qualification | Series | Packaging |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: 2SA1962-O(Q) TTI: Not Assigned Toshiba Availability: Not Available OnlineBipolar Transistors - BJT PNP 230V 15A | Not Available Online | Si | Through Hole | TO-3P-3 | PNP | Single | 15 A | 230 V | 230 V | 5 V | 1.5 V | 130 W | 30 MHz | - 55 C | + 150 C | 2SA1962 | Bulk | |||
Not Available Online | Si | Through Hole | TO-3P-3 | PNP | Single | 15 A | 230 V | 230 V | 5 V | 130 W | 30 MHz | - 55 C | + 150 C | 2SA1962 | ||||||
Mfr: 2SA1962-O(Q,T) TTI: Not Assigned Toshiba Availability: Not Available OnlineBipolar Transistors - BJT Transistor PNP 230V 15A | Not Available Online | Si | Through Hole | TO-3P-3 | PNP | Single | 15 A | 230 V | 230 V | 5 V | 130 W | 30 MHz | - 55 C | + 150 C | 2SA1962 |