2SA1160 - Toshiba - Bipolar Transistors - BJT
1 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Configuration | Maximum DC Collector Current | Collector- Emitter Voltage VCEO Max | Collector- Base Voltage VCBO | Emitter- Base Voltage VEBO | Collector-Emitter Saturation Voltage | Pd - Power Dissipation | Gain Bandwidth Product fT | Minimum Operating Temperature | Maximum Operating Temperature | Qualification | Series | Packaging |
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Mfr: 2SA1160-B(TE6,F,M) TTI: Not Assigned Toshiba Availability: Not Available OnlineBipolar Transistors - BJT PNP 10V 2A Transistor | Not Available Online | Si | Through Hole | LSTM-3 | PNP | Single | 2 A | 10 V | 20 V | 6 V | 900 mW | 140 MHz | + 150 C | 2SA1160 |