2N5088 - Toshiba - Bipolar Transistors - BJT
3 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Configuration | Maximum DC Collector Current | Collector- Emitter Voltage VCEO Max | Collector- Base Voltage VCBO | Emitter- Base Voltage VEBO | Collector-Emitter Saturation Voltage | Pd - Power Dissipation | Gain Bandwidth Product fT | Minimum Operating Temperature | Maximum Operating Temperature | Qualification | Series | Packaging |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Not Available Online | Si | Through Hole | TO-92-3 | NPN | Single | 100 mA | 30 V | 35 V | 4.5 V | 625 mW | 50 MHz | - 55 C | + 150 C | 2N5088 | ||||||
Not Available Online | Si | Through Hole | TO-92-3 | NPN | Single | 100 mA | 30 V | 35 V | 4.5 V | 625 mW | 50 MHz | - 55 C | + 150 C | 2N5088 | ||||||
Not Available Online | Si | Through Hole | TO-92-3 | NPN | Single | 100 mA | 30 V | 35 V | 4.5 V | 625 mW | 50 MHz | - 55 C | + 150 C | 2N5088 |