2N2907 - Toshiba - Bipolar Transistors - BJT
2 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Configuration | Maximum DC Collector Current | Collector- Emitter Voltage VCEO Max | Collector- Base Voltage VCBO | Emitter- Base Voltage VEBO | Collector-Emitter Saturation Voltage | Pd - Power Dissipation | Gain Bandwidth Product fT | Minimum Operating Temperature | Maximum Operating Temperature | Qualification | Series | Packaging |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Not Available Online | Si | PNP | Single | 600 mA | 40 V | 60 V | 5 V | 400 mW | 200 MHz | - 55 C | + 150 C | 2N2907 | ||||||||
Not Available Online | Si | PNP | Single | 600 mA | 60 V | 60 V | 5 V | 400 mW | 200 MHz | - 65 C | + 175 C | 2N2907 |
