2DC4617 - Toshiba - Bipolar Transistors - BJT
4 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Configuration | Maximum DC Collector Current | Collector- Emitter Voltage VCEO Max | Collector- Base Voltage VCBO | Emitter- Base Voltage VEBO | Collector-Emitter Saturation Voltage | Pd - Power Dissipation | Gain Bandwidth Product fT | Minimum Operating Temperature | Maximum Operating Temperature | Qualification | Series | Packaging |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Not Available Online | Si | NPN | Single | 150 mA | 50 V | 60 V | 7 V | 150 mW | 180 MHz | - 55 C | + 150 C | 2DC4617 | ||||||||
Mfr: 2DC4617R-7-F TTI: Not Assigned Toshiba Availability: Not Available OnlineBipolar Transistors - BJT | Not Available Online | Si | NPN | Single | 150 mA | 50 V | 60 V | 7 V | 150 mW | 180 MHz | - 55 C | + 150 C | 2DC4617 | |||||||
Not Available Online | Si | NPN | Single | 150 mA | 50 V | 60 V | 7 V | 150 mW | 180 MHz | - 55 C | + 150 C | 2DC4617 | ||||||||
Not Available Online | Si | NPN | Single | 150 mA | 50 V | 60 V | 7 V | 150 mW | 180 MHz | - 55 C | + 150 C | 2DC4617 |
