Toshiba - Bipolar Transistors - BJT
727 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Configuration | Maximum DC Collector Current | Collector- Emitter Voltage VCEO Max | Collector- Base Voltage VCBO | Emitter- Base Voltage VEBO | Collector-Emitter Saturation Voltage | Pd - Power Dissipation | Gain Bandwidth Product fT | Minimum Operating Temperature | Maximum Operating Temperature | Qualification | Series | Packaging |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Not Available Online | Si | Through Hole | TO-3P-3 | NPN | Single | 15 A | 230 V | 230 V | 5 V | 400 mV | 150 W | 30 MHz | - 55 C | + 150 C | 2SC | |||||
Mfr: 2SC3423-Y(Q) TTI: Not Assigned Toshiba Availability: Not Available OnlineBipolar Transistors - BJT | Not Available Online | Si | Through Hole | NPN | Single | 150 V | 150 V | 5 V | 5 W | 200 MHz | 2SC3423 | Tube |