TT Electronics - Bipolar Transistors - BJT
55 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Configuration | Maximum DC Collector Current | Collector- Emitter Voltage VCEO Max | Collector- Base Voltage VCBO | Emitter- Base Voltage VEBO | Collector-Emitter Saturation Voltage | Pd - Power Dissipation | Gain Bandwidth Product fT | Minimum Operating Temperature | Maximum Operating Temperature | Qualification | Series | Packaging |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Not Available Online | Si | Through Hole | TO-39-3 | PNP | Single | 5 A | 60 V | 65 V | 6 V | 1 W | 70 MHz | - 65 C | + 200 C | |||||||
Not Available Online | Si | TO-39-3 | NPN | Single | 1 A | 80 V | 140 V | 7 V | 800 mW | 400 MHz | - 55 C | + 150 C | ||||||||
Not Available Online | Si | |||||||||||||||||||
Mfr: BDS19-QR-B TTI: Not Assigned Semelab / TT Electronics Availability: Not Available OnlineBipolar Transistors - BJT | Not Available Online | Si | Through Hole | TO-220M-3 | PNP | Single | 150 V | 150 V | 5 V | 1.5 V | 50 W | 10 MHz | - 65 C | + 200 C | ||||||
Not Available Online | Si | PNP | Waffle |
