YAGEO XSemi - MOSFETs
96 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
3,000In Stock | Si | SMD/SMT | TO-252-3/2 | N-Channel | 1 Channel | 60 V | 126 A | 3 mOhms | - 20 V, 20 V | 4 V | 70 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | |||||
6,000In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 30 V | 245 A | 1.05 mOhms | - 20 V, 20 V | 900 mV | 75 nC | - 55 C | + 150 C | 104 W | Enhancement | Reel | |||||
3,000In Stock | Si | SMD/SMT | TO-252-3/2 | N-Channel | 1 Channel | 40 V | 83 A | 4.2 mOhms | - 20 V, 20 V | 3 V | 28 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | |||||
3,000In Stock | Si | SMD/SMT | TO-252-3/2 | N-Channel | 1 Channel | 60 V | 66 A | 6.5 mOhms | - 20 V, 20 V | 4 V | 35 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | |||||
6,000In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 30 V | 10 A | 20 mOhms | - 20 V, 20 V | 3 V | 5.3 nC | - 55 C | + 150 C | 3.12 W | Enhancement | Reel | |||||
3,000In Stock | Si | SMD/SMT | TO-252-3/2 | N-Channel | 1 Channel | 30 V | 38.5 A | 9.5 mOhms | - 20 V, 20 V | 3 V | 9 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | |||||
6,000In Stock | Si | SMD/SMT | SOT-23S-3 | N-Channel | 1 Channel | 30 V | 5.4 A | 28 mOhms | - 20 V, 20 V | 3 V | 7.2 nC | - 55 C | + 150 C | 1.25 W | Enhancement | Reel | |||||
6,000In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 30 V | 58 A | 4.5 mOhms | - 20 V, 20 V | 3 V | 19 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | |||||
3,000In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 40 V | 125 A | 2.55 mOhms | - 20 V, 20 V | 4 V | 70 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | |||||
6,000In Stock | Si | SMD/SMT | PMPAK-8 | P-Channel | 1 Channel | 30 V | 33.5 A | 3 mOhms | - 20 V, 20 V | 3 V | 76 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | |||||
Mfr: XP3N5R0AYT TTI: XP3N5R0AYT YAGEO XSemi Availability: 9,000In StockMOSFETs N-CH 30V 63.5 A PMPAK-3x3 | 9,000In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 30 V | 20 A | 5 mOhms | - 20 V, 20 V | 2.3 V | 40 nC | - 55 C | + 150 C | 3.12 W | Enhancement | Reel | ||||
12,000In Stock | Si | SMD/SMT | PMPAK-8 | P-Channel | 1 Channel | 30 V | 14.6 A | 10 mOhms | - 20 V, 20 V | 3 V | 34 nC | - 55 C | + 150 C | 3.12 W | Enhancement | Reel | |||||
4,000In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 100 V | 48.5 A | 11 mOhms | - 20 V, 20 V | 4 V | 35 nC | - 55 C | + 150 C | 1.13 W | Enhancement | Tube | |||||
6,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 132 A | 3.88 mOhms | - 20 V, 20 V | 4 V | 85 nC | - 55 C | + 150 C | 2 W | Enhancement | Tube | |||||
Mfr: XP10NA8R4IT TTI: XP10NA8R4IT YAGEO XSemi Availability: 3,000In StockMOSFETs N-CH 100V 44A TO-220CFM-T | 3,000In Stock | Si | Through Hole | TO-220CFM-3 | N-Channel | 1 Channel | 100 V | 44 A | 8.4 mOhms | - 20 V, 20 V | 4 V | 42 nC | - 55 C | + 150 C | 1.92 W | Enhancement | Tube | ||||
3,000In Stock | Si | SMD/SMT | TO-252-3/2 | N-Channel | 1 Channel | 30 V | 62 A | 5 mOhms | - 20 V, 20 V | 3 V | 23 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | |||||
3,000In Stock | Si | SMD/SMT | SOT-223-4 | N-Channel | 1 Channel | 100 V | 3 A | 135 mOhms | - 20 V, 20 V | 3 V | 12 nC | - 55 C | + 150 C | 2.78 W | Enhancement | Reel | |||||
9,000In Stock | Si | SMD/SMT | SO-8 | P-Channel | 1 Channel | 30 V | 13.3 A | 10 mOhms | - 20 V, 20 V | 3 V | 34 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | |||||
3,000In Stock | Si | SMD/SMT | SO-8 | N-Channel, P-Channel | 2 Channel | 30 V | 5.5 A, 7.8 A | 20 mOhms, 45 mOhms | - 20 V, 20 V | 2.2 V | 5 nC, 5.8 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | |||||
6,000In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 150 V | 15.8 A | 59 mOhms | - 20 V, 20 V | 4 V | 16 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | |||||
6,000In Stock | Si | SMD/SMT | TO-252-3/2 | N-Channel | 1 Channel | 100 V | 48.5 A | 11 mOhms | - 20 V, 20 V | 4 V | 35 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | |||||
6,000In Stock | Si | SMD/SMT | SO-8 | N-Channel | 1 Channel | 30 V | 18.5 A | 4.5 mOhms | - 20 V, 20 V | 3 V | 17.5 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | |||||
Mfr: XP6NA1R7CMT TTI: XP6NA1R7CMT YAGEO XSemi Availability: 6,000In StockMOSFETs N-CH 60V 41.6 A PMPAK-5x6 | 6,000In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 60 V | 190 A | 1.7 mOhms | - 20 V, 20 V | 4 V | 100 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | ||||
9,000In Stock | Si | SMD/SMT | SO-8 | P-Channel | 1 Channel | 30 V | 9.3 A | 20 mOhms | - 20 V, 20 V | 3 V | 12 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | |||||
Mfr: XP3NA2R4MT TTI: XP3NA2R4MT YAGEO XSemi Availability: 6,000In StockMOSFETs N-CH 30V 36.5 A PMPAK-5x6 | 6,000In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 30 V | 118 A | 2.4 mOhms | - 20 V, 20 V | 3 V | 41 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel |
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