Vishay Semiconductors - MOSFETs
2,045 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SI4164DY-T1-GE3 TTI: SI4164DY-T1-GE3 Vishay Semiconductors Availability: 2,500In StockMOSFETs 30V Vds 20V Vgs SO-8 | 2,500In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 30 A | 3.2 mOhms | 20 V | 1.2 V | 95 nC | - 55 C | + 150 C | 6 W | Enhancement | TrenchFET | Reel | SI4164DY-GE3 | |||
Mfr: SI5442DU-T1-GE3 TTI: SI5442DU-T1-GE3 Vishay Semiconductors Availability: 3,000In Stock3,000 On Order Expected 24-May-29 MOSFETs 20V Vds 8V Vgs PowerPAK ChipFET | 3,000In Stock3,000 On Order Expected 24-May-29 | Si | SMD/SMT | ChipFET-8 | N-Channel | 1 Channel | 20 V | 25 A | 10 mOhms | 8 V | 400 mV | 45 nC | - 55 C | + 150 C | 31 W | Enhancement | TrenchFET | Reel | ||||
Mfr: IRF9520SPBF TTI: IRF9520SPBF Vishay Semiconductors Availability: 700In StockMOSFETs TO263 100V 6.8A P-CH MOSFET | 700In Stock | Si | SMD/SMT | TO-263-3 | P-Channel | 1 Channel | 100 V | 6.8 A | 600 mOhms | 20 V | 4 V | 18 nC | - 55 C | + 175 C | 60 W | Enhancement | Tube | |||||
Mfr: SI7655DN-T1-GE3 TTI: SI7655DN-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -20V 3.6mOhm@10V 40A P-Ch G-III | 3,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 20 V | 40 A | 3 mOhms | 12 V | 1.1 V | 225 nC | - 50 C | + 150 C | 57 W | Enhancement | TrenchFET | Reel | SI7655DN-GE3 | |||
Mfr: IRFR120TRPBF TTI: IRFR120TRPBF Vishay Semiconductors Availability: 2,000In StockMOSFETs TO252 100V 7.7A N-CH MOSFET | 2,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 7.7 A | 270 mOhms | 20 V | 2 V | 16 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | IRFR120TRPBF-BE3 | ||||
Mfr: SI4186DY-T1-GE3 TTI: SI4186DY-T1-GE3 Vishay Semiconductors Availability: 2,500In StockMOSFETs 20V Vds 20V Vgs SO-8 | 2,500In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 20 V | 35.8 A | 2.6 mOhms | 20 V | 1.2 V | 90 nC | - 55 C | + 150 C | 6 W | Enhancement | TrenchFET | Reel | SI4186DY-GE3 | |||
Mfr: SI7772DP-T1-GE3 TTI: SI7772DP-T1-GE3 Vishay Semiconductors Availability: 33,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 33,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 35.6 A | 13 mOhms | 20 V | 2.5 V | 18.5 nC | - 55 C | + 150 C | 29.8 W | Enhancement | TrenchFET | Reel | SI7772DP-GE3 | |||
Mfr: SI1965DH-T1-GE3 TTI: SI1965DH-T1-GE3 Vishay Semiconductors Availability: 12,000In StockMOSFETs -12V Vds 8V Vgs SC70-6 | 12,000In Stock | Si | SMD/SMT | SOT-363-6 | P-Channel | 2 Channel | 12 V | 1.3 A | 390 mOhms | 8 V | 2.5 V | 4.2 nC | - 55 C | + 150 C | 1.25 W | Enhancement | TrenchFET | Reel | SI1965DH-T1-BE3 SI1905DL-T1-GE3 SI1917EDH-T1-GE3 | |||
Mfr: SIHG20N50E-GE3 TTI: SIHG20N50E-GE3 Vishay Semiconductors Availability: 1,150In StockMOSFETs 500V Vds 30V Vgs TO-247AC | 1,150In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 19 A | 184 mOhms | 30 V | 4 V | 46 nC | - 55 C | + 150 C | 179 W | Enhancement | Tube | |||||
Mfr: IRFP460PBF TTI: IRFP460PBF Vishay Semiconductors Availability: 4,500In StockMOSFETs TO247 500V 20A N-CH MOSFET | 4,500In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 20 A | 270 mOhms | 20 V | 2 V | 210 nC | - 55 C | + 150 C | 280 W | Enhancement | Tube | |||||
Mfr: SIA923EDJ-T1-GE3 TTI: SIA923EDJ-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -20V Vds 8V Vgs PowerPAK SC-70 | 3,000In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 2 Channel | 20 V | 4.5 A | 44 mOhms, 44 mOhms | 8 V | 1.4 V | 25 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA923EDJ-GE3 | |||
Mfr: IRFR024PBF TTI: IRFR024PBF Vishay Semiconductors Availability: 900In StockMOSFETs TO252 N-CH 60V 14A | 900In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 60 V | 14 A | 100 mOhms | 20 V | 2 V | 25 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | |||||
Mfr: IRFBF20SPBF TTI: IRFBF20SPBF Vishay Semiconductors Availability: 200In StockMOSFETs TO263 900V 1.7A N-CH MOSFET | 200In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 900 V | 1.7 A | 8 Ohms | 20 V | 2 V | 38 nC | - 55 C | + 150 C | 54 W | Enhancement | Tube | |||||
Mfr: SI7625DN-T1-GE3 TTI: SI7625DN-T1-GE3 Vishay Semiconductors Availability: 18,000In StockMOSFETs -30V Vds 20V Vgs PowerPAK 1212-8 | 18,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 30 V | 35 A | 5.6 mOhms | 20 V | 2.5 V | 126 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET | Reel | SI7625DN-GE3 | |||
Mfr: SIRA06DP-T1-GE3 TTI: SIRA06DP-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 40 A | 2.05 mOhms | - 16 V, 20 V | 1.1 V | 77 nC | - 55 C | + 150 C | 62.5 W | Enhancement | TrenchFET, PowerPAK | Reel | SIRA06DP-GE3 | |||
Mfr: SI3443CDV-T1-GE3 TTI: SI3443CDV-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -20V Vds 12V Vgs TSOP-6 | 3,000In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 20 V | 5.97 A | 100 mOhms | 12 V | 1.5 V | 7.53 nC | - 55 C | + 150 C | 3.2 W | Enhancement | TrenchFET | Reel | SI3443CDV-T1-BE3 SI3443CDV-GE3 | |||
Mfr: SUD15N15-95-E3 TTI: SUD15N15-95-E3 Vishay Semiconductors Availability: 6,000In StockMOSFETs RECOMMENDED ALT SUD1 | 6,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 150 V | 15 A | 95 mOhms | 20 V | 2 V | 25 nC | - 55 C | + 175 C | 62 W | Enhancement | TrenchFET | Reel | SUD15N15-95-BE3 | |||
Mfr: SUP85N10-10-E3 TTI: SUP85N10-10-E3 Vishay Semiconductors Availability: 1,000In StockMOSFETs TO220 100V 85A N-CH MOSFET | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 85 A | 8.5 mOhms | 20 V | 1 V | 160 nC | - 55 C | + 175 C | 250 W | Enhancement | TrenchFET | Tube | ||||
Mfr: SUM70060E-GE3 TTI: SUM70060E-GE3 Vishay Semiconductors Availability: 4,000In StockMOSFETs 100V Vds 20V Vgs D2PAK (TO-263) | 4,000In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 131 A | 5.6 mOhms | 20 V | 4 V | 81 nC | - 55 C | + 175 C | 375 W | Enhancement | ThunderFET | Reel | ||||
Mfr: IRFIBE30GPBF TTI: IRFIBE30GPBF Vishay Semiconductors Availability: 300In StockMOSFETs N-Channel Power MOSFET 2.1A, 800V, 78nC | 300In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 800 V | 2.1 A | 3 Ohms | 20 V | 2 V | 78 nC | - 55 C | + 150 C | 35 W | Enhancement | Tube | |||||
Mfr: SIR800DP-T1-GE3 TTI: SIR800DP-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 20V Vds 12V Vgs PowerPAK SO-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 20 V | 50 A | 2.3 mOhms | 12 V | 600 mV | 133 nC | - 55 C | + 150 C | 69 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR800DP-GE3 | |||
Mfr: SIA929DJ-T1-GE3 TTI: SIA929DJ-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds 12V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 2 Channel | 30 V | 4.5 A | 52 mOhms, 52 mOhms | 12 V | 1.1 V | 21 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA929DJ-GE3 | |||
Mfr: SIHP15N50E-GE3 TTI: SIHP15N50E-GE3 Vishay Semiconductors Availability: 3,350In StockMOSFETs 500V Vds 30V Vgs TO-220AB | 3,350In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 14.5 A | 243 mOhms | 30 V | 4 V | 33 nC | - 55 C | + 150 C | 156 W | Enhancement | Tube | SIHP15N50E-BE3 | ||||
Mfr: SIS888DN-T1-GE3 TTI: SIS888DN-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 150V Vds 20V Vgs PowerPAK 1212-8S | 3,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 150 V | 20.2 A | 58 mOhms | 20 V | 3 V | 14.5 nC | - 55 C | + 150 C | 52 W | Enhancement | ThunderFET | Reel | ||||
Mfr: SIA906EDJ-T1-GE3 TTI: SIA906EDJ-T1-GE3 Vishay Semiconductors Availability: 21,000In StockMOSFETs 20V Vds 12V Vgs PowerPAK SC-70 | 21,000In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 2 Channel | 20 V | 4.5 A | 46 mOhms | 8 V | 600 mV | 950 pC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA906EDJ-GE3 |