Vishay Semiconductors - MOSFETs
2,042 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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400In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 50 A | 28 mOhms | - 20 V, 20 V | 4 V | 67 nC | - 55 C | + 175 C | 150 W | Enhancement | Tube | IRFZ40PBF-BE3 | |||||
Mfr: SIHB22N60E-GE3 TTI: SIHB22N60E-GE3 Vishay Semiconductors Availability: 1,300In StockMOSFETs 600V Vds 30V Vgs D2PAK (TO-263) | 1,300In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 650 V | 21 A | 180 mOhms | - 30 V, 30 V | 4 V | 57 nC | - 55 C | + 150 C | 227 W | Enhancement | Tube | |||||
Mfr: IRFR220PBF-BE3 TTI: IRFR220PBF-BE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs TO252 200V 4.8A N-CH MOSFET | 3,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 200 V | 4.8 A | 800 mOhms | - 20 V, 20 V | 2 V | 14 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | |||||
Mfr: SI3932DV-T1-GE3 TTI: SI3932DV-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 30V Vds 20V Vgs TSOP-6 | 3,000In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 2 Channel | 30 V | 3.7 A | 58 mOhms | - 20 V, 20 V | 1.2 V | 6 nC | - 55 C | + 150 C | 1.4 W | Enhancement | TrenchFET | Reel | SI3932DV-GE3 | |||
Mfr: IRFR1N60APBF TTI: IRFR1N60APBF Vishay Semiconductors Availability: 1,275In StockMOSFETs N-Chan 600V 1.4 Amp | 1,275In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 1.4 A | 7 Ohms | - 30 V, 30 V | 4 V | 14 nC | - 55 C | + 150 C | 36 W | Enhancement | Tube | IRFR1N60APBF-BE3 | ||||
Mfr: IRFIBE30GPBF TTI: IRFIBE30GPBF Vishay Semiconductors Availability: 600In StockMOSFETs TO220 800V 2.1A N-CH MOSFET | 600In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 2.1 A | 3 Ohms | - 20 V, 20 V | 2 V | 78 nC | - 55 C | + 150 C | 35 W | Enhancement | Tube | |||||
Mfr: SI2300DS-T1-GE3 TTI: SI2300DS-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 30V Vds 12V Vgs SOT-23 | 6,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 30 V | 3.6 A | 68 mOhms | - 12 V, 12 V | 1.5 V | 3 nC | - 55 C | + 150 C | 1.7 W | Enhancement | TrenchFET | Reel | SI2300DS-T1-BE3 SI2300DS-GE3 | |||
Mfr: IRFBF20SPBF TTI: IRFBF20SPBF Vishay Semiconductors Availability: 200In StockMOSFETs TO263 900V 1.7A N-CH MOSFET | 200In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 900 V | 1.7 A | 8 Ohms | - 20 V, 20 V | 2 V | 38 nC | - 55 C | + 150 C | 54 W | Enhancement | Tube | |||||
Mfr: SIRA06DP-T1-GE3 TTI: SIRA06DP-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 40 A | 2.05 mOhms | - 16 V, 20 V | 1.1 V | 77 nC | - 55 C | + 150 C | 62.5 W | Enhancement | TrenchFET, PowerPAK | Reel | SIRA06DP-GE3 | |||
Mfr: SIA461DJ-T1-GE3 TTI: SIA461DJ-T1-GE3 Vishay Semiconductors Availability: 15,000In StockMOSFETs -20V Vds 8V Vgs PowerPAK SC-70 | 15,000In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 20 V | 12 A | 33 mOhms | - 8 V, 8 V | 400 mV | 18 nC | - 55 C | + 150 C | 17.9 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA461DJ-GE3 | |||
Mfr: SI7655DN-T1-GE3 TTI: SI7655DN-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -20V 3.6mOhm@10V 40A P-Ch G-III | 3,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 20 V | 40 A | 3 mOhms | - 12 V, 12 V | 1.1 V | 225 nC | - 50 C | + 150 C | 57 W | Enhancement | TrenchFET | Reel | SI7655DN-GE3 | |||
Mfr: SIS890DN-T1-GE3 TTI: SIS890DN-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 100V Vds 20V Vgs PowerPAK 1212-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 100 V | 30 A | 19.5 mOhms | - 20 V, 20 V | 1.5 V | 29 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET | Reel | SIS890DN-GE3 | |||
Mfr: SI3440ADV-T1-GE3 TTI: SI3440ADV-T1-GE3 Vishay Semiconductors Availability: 15,000In Stock9,000 On Order Expected 14-Jul-26 MOSFETs 150V Vds 20V Vgs TSOP-6 | 15,000In Stock9,000 On Order Expected 14-Jul-26 | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 150 V | 2.2 A | 380 mOhms | - 20 V, 20 V | 4 V | 1.65 nC | - 55 C | + 150 C | 3.6 W | Enhancement | ThunderFET | Reel | SI3440ADV-T1-BE3 | |||
Mfr: SI5442DU-T1-GE3 TTI: SI5442DU-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 20V Vds 8V Vgs PowerPAK ChipFET | 6,000In Stock | Si | SMD/SMT | ChipFET-8 | N-Channel | 1 Channel | 20 V | 25 A | 10 mOhms | - 8 V, 8 V | 400 mV | 45 nC | - 55 C | + 150 C | 31 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIHG20N50E-GE3 TTI: SIHG20N50E-GE3 Vishay Semiconductors Availability: 1,150In StockMOSFETs 500V Vds 30V Vgs TO-247AC | 1,150In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 19 A | 184 mOhms | - 30 V, 30 V | 4 V | 46 nC | - 55 C | + 150 C | 179 W | Enhancement | Tube | |||||
Mfr: IRF840LCPBF TTI: IRF840LCPBF Vishay Semiconductors Availability: 600In StockMOSFETs TO220 500V 8A N-CH MOSFET | 600In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 8 A | 850 mOhms | - 30 V, 30 V | 4 V | 39 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRF840LCPBF-BE3 | ||||
Mfr: IRFRC20PBF TTI: IRFRC20PBF Vishay Semiconductors Availability: 2,475In StockMOSFETs TO252 600V 2A N-CH | 2,475In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 2 A | 4.4 Ohms | - 20 V, 20 V | 2 V | 18 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | |||||
Mfr: SI7625DN-T1-GE3 TTI: SI7625DN-T1-GE3 Vishay Semiconductors Availability: 18,000In StockMOSFETs -30V Vds 20V Vgs PowerPAK 1212-8 | 18,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 30 V | 35 A | 5.6 mOhms | - 20 V, 20 V | 2.5 V | 126 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET | Reel | SI7625DN-GE3 | |||
Mfr: SI1922EDH-T1-GE3 TTI: SI1922EDH-T1-GE3 Vishay Semiconductors Availability: 39,000In StockMOSFETs 20V Vds 8V Vgs SC70-6 | 39,000In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 2 Channel | 20 V | 1.3 A | 198 mOhms | - 8 V, 8 V | 1 V | 2.5 nC | - 55 C | + 150 C | 1.25 W | Enhancement | TrenchFET | Reel | SI1922EDH-T1-BE3 SI1988DH-T1-GE3 | |||
Mfr: SI4186DY-T1-GE3 TTI: SI4186DY-T1-GE3 Vishay Semiconductors Availability: 5,000In StockMOSFETs 20V Vds 20V Vgs SO-8 | 5,000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 20 V | 35.8 A | 2.6 mOhms | - 20 V, 20 V | 1.2 V | 90 nC | - 55 C | + 150 C | 6 W | Enhancement | TrenchFET | Reel | SI4186DY-GE3 | |||
Mfr: SI1965DH-T1-GE3 TTI: SI1965DH-T1-GE3 Vishay Semiconductors Availability: 12,000In StockMOSFETs -12V Vds 8V Vgs SC70-6 | 12,000In Stock | Si | SMD/SMT | SOT-363-6 | P-Channel | 2 Channel | 12 V | 1.3 A | 390 mOhms | - 8 V, 8 V | 2.5 V | 4.2 nC | - 55 C | + 150 C | 1.25 W | Enhancement | TrenchFET | Reel | SI1965DH-T1-BE3 SI1905DL-T1-GE3 SI1917EDH-T1-GE3 | |||
Mfr: IRFR024PBF TTI: IRFR024PBF Vishay Semiconductors Availability: 1,950In StockMOSFETs TO252 N-CH 60V 14A | 1,950In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 60 V | 14 A | 100 mOhms | - 20 V, 20 V | 2 V | 25 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | |||||
Mfr: SIHG22N60E-GE3 TTI: SIHG22N60E-GE3 Vishay Semiconductors Availability: 3,850In StockMOSFETs 600V Vds 30V Vgs TO-247AC | 3,850In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 21 A | 180 mOhms | - 30 V, 30 V | 4 V | 57 nC | - 55 C | + 150 C | 227 W | Enhancement | Tube | |||||
Mfr: SIHG018N60E-GE3 TTI: SIHG018N60E-GE3 Vishay Semiconductors Availability: 1,425In StockMOSFETs 600V Vds 30V Vgs TO-247AC | 1,425In Stock | Si | Through Hole | TO-247AC-3 | N-Channel | 1 Channel | 600 V | 99 A | 23 mOhms | - 30 V, 30 V | 3 V | 228 nC | - 55 C | + 150 C | 524 W | Enhancement | Tube | |||||
Mfr: SIA817EDJ-T1-GE3 TTI: SIA817EDJ-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs -30V Vds 12V Vgs PowerPAK SC-70 | 6,000In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 30 V | 4.5 A | 54 mOhms | - 12 V, 12 V | 1.3 V | 23 nC | - 55 C | + 150 C | 6.5 W | Enhancement | LITTLE FOOT, PowerPAK | Reel |
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