Vishay Semiconductors - MOSFETs
2,042 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SI4190ADY-T1-GE3 TTI: SI4190ADY-T1-GE3 Vishay Semiconductors Availability: 2,500In StockMOSFETs 100V Vds 20V Vgs SO-8 | 2,500In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 100 V | 18.4 A | 7.3 mOhms | - 20 V, 20 V | 1.5 V | 67 nC | - 55 C | + 150 C | 6 W | Enhancement | TrenchFET | Reel | SI4190ADY-GE3 | |||
Mfr: IRFP450APBF TTI: IRFP450APBF Vishay Semiconductors Availability: 800In StockMOSFETs TO247 500V 14A N-CH MOSFET | 800In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 14 A | 400 mOhms | - 30 V, 30 V | 2 V | 64 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube | |||||
Mfr: SI4162DY-T1-GE3 TTI: SI4162DY-T1-GE3 Vishay Semiconductors Availability: 40,000In StockMOSFETs 30V Vds 20V Vgs SO-8 | 40,000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 19.3 A | 7.9 mOhms | - 20 V, 20 V | 3 V | 20 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI4162DY-GE3 | |||
Mfr: SIA533EDJ-T1-GE3 TTI: SIA533EDJ-T1-GE3 Vishay Semiconductors Availability: 27,000In StockMOSFETs -12V Vds 8V Vgs PowerPAK SC-70 | 27,000In Stock | Si | SMD/SMT | SC-70-6 | N-Channel, P-Channel | 2 Channel | 12 V | 4.5 A | 34 mOhms, 59 mOhms | - 8 V, 8 V | 400 mV | 10 nC, 13 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA533EDJ-GE3 | |||
Mfr: SISS42LDN-T1-GE3 TTI: SISS42LDN-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs Nch 100V Vds 20V Vgs PowerPAK 1212-8S | 3,000In Stock | Si | SMD/SMT | PowerPAK-1212-8S | N-Channel | 1 Channel | 100 V | 39 A | 14.9 mOhms | - 20 V, 20 V | 1 V | 48 nC | - 55 C | + 150 C | 57 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: IRFBF30PBF TTI: IRFBF30PBF Vishay Semiconductors Availability: 300In StockMOSFETs TO220 900V 3.6A N-CH MOSFET | 300In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 900 V | 3.6 A | 3.7 Ohms | - 20 V, 20 V | 4 V | 78 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRFBF30PBF-BE3 | ||||
Mfr: SI4126DY-T1-GE3 TTI: SI4126DY-T1-GE3 Vishay Semiconductors Availability: 10,000In StockMOSFETs 30V Vds 20V Vgs SO-8 | 10,000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 39 A | 2.75 mOhms | - 20 V, 20 V | 1 V | 70 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET | Reel | SI4126DY-GE3 | |||
Mfr: IRFBE20PBF TTI: IRFBE20PBF Vishay Semiconductors Availability: 450In StockMOSFETs TO220 800V 1.8A N-CH MOSFET | 450In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 1.8 A | 6.5 Ohms | - 20 V, 20 V | 4 V | 38 nC | - 55 C | + 150 C | 54 W | Enhancement | Tube | IRFBE20PBF-BE3 | ||||
Mfr: IRF840ASPBF TTI: IRF840ASPBF Vishay Semiconductors Availability: 50In StockMOSFETs TO263 500V 8A N-CH MOSFET | 50In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 500 V | 8 A | 850 mOhms | - 30 V, 30 V | 2 V | 38 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | |||||
Mfr: SI7439DP-T1-GE3 TTI: SI7439DP-T1-GE3 Vishay Semiconductors Availability: 30,000In StockMOSFETs -150V Vds 20V Vgs PowerPAK SO-8 | 30,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 150 V | 5.2 A | 90 mOhms | - 20 V, 20 V | 2 V | 88 nC | - 55 C | + 150 C | 5.4 W | Enhancement | TrenchFET | Reel | SI7439DP-GE3 | |||
Mfr: SI4483ADY-T1-GE3 TTI: SI4483ADY-T1-GE3 Vishay Semiconductors Availability: 5,000In StockMOSFETs -30V Vds 25V Vgs SO-8 | 5,000In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 30 V | 19.2 A | 15.3 mOhms | - 25 V, 25 V | 2.6 V | 135 nC | - 55 C | + 150 C | 5.9 W | Enhancement | TrenchFET | Reel | SI4483ADY-GE3 | |||
Mfr: SIA449DJ-T1-GE3 TTI: SIA449DJ-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -30V Vds 12V Vgs PowerPAK SC-70 | 3,000In Stock | Si | SMD/SMT | PowerPAK-SC70-6 | P-Channel | 1 Channel | 30 V | 12 A | 15.5 mOhms | - 12 V, 12 V | 1.5 V | 72 nC | - 55 C | + 150 C | 19 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: IRLI640GPBF TTI: IRLI640GPBF Vishay Semiconductors Availability: 2,600In StockMOSFETs TO220 200V 9.9A N-CH MOSFET | 2,600In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 9.9 A | 180 mOhms | - 10 V, 10 V | 1 V | 66 nC | - 55 C | + 150 C | 40 W | Enhancement | Tube | |||||
Mfr: IRFBC40ASPBF TTI: IRFBC40ASPBF Vishay Semiconductors Availability: 4,400In StockMOSFETs N-Chan 600V 6.2 Amp | 4,400In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 6.2 A | 1.2 Ohms | - 30 V, 30 V | 2 V | 42 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | |||||
Mfr: IRFR420TRLPBF TTI: IRFR420TRLPBF Vishay Semiconductors Availability: 27,000In StockMOSFETs TO252 500V 2.4A N-CH MOSFET | 27,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 500 V | 2.4 A | 3 Ohms | - 20 V, 20 V | 4 V | 19 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | |||||
Mfr: SI7820DN-T1-E3 TTI: SI7820DN-T1-E3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 200V Vds 20V Vgs PowerPAK 1212-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 200 V | 1.7 A | 240 mOhms | - 20 V, 20 V | 2 V | 12.1 nC | - 55 C | + 150 C | 1.5 W | Enhancement | TrenchFET | Reel | SI7820DN-T1 | |||
Mfr: IRF9Z30PBF TTI: IRF9Z30PBF Vishay Semiconductors Availability: 500In StockMOSFETs TO220 P-CH 50V 18A | 500In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 50 V | 18 A | 140 mOhms | - 20 V, 20 V | 4 V | 39 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | IRF9Z30PBF-BE3 | ||||
Mfr: IRFU320PBF TTI: IRFU320PBF Vishay Semiconductors Availability: 1,950In StockMOSFETs N-Chan 400V 3.1 Amp | 1,950In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 400 V | 3.1 A | 1.8 Ohms | - 20 V, 20 V | 2 V | 20 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | |||||
Mfr: IRF620STRLPBF TTI: IRF620STRLPBF Vishay Semiconductors Availability: 800In StockMOSFETs N-Chan 200V 5.2 Amp | 800In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 200 V | 5.2 A | 800 mOhms | - 20 V, 20 V | 2 V | 14 nC | - 55 C | + 150 C | 50 W | Enhancement | Reel | |||||
Mfr: IRFBC40STRLPBF TTI: IRFBC40STRLPBF Vishay Semiconductors Availability: 800In Stock1,600 On Order Expected 07-Jul-26 MOSFETs N-Chan 600V 6.2 Amp | 800In Stock1,600 On Order Expected 07-Jul-26 | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 6.2 A | 1.2 Ohms | - 30 V, 30 V | 2 V | 60 nC | - 55 C | + 150 C | 130 W | Enhancement | Reel | |||||
Mfr: SI7148DP-T1-E3 TTI: SI7148DP-T1-E3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 75V Vds 20V Vgs PowerPAK SO-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 75 V | 28 A | 11 mOhms | - 20 V, 20 V | 2.5 V | 68 nC | - 55 C | + 150 C | 96 W | Enhancement | TrenchFET | Reel | SI7148DP-E3 | |||
Mfr: SI8483DB-T2-E1 TTI: SI8483DB-T2-E1 Vishay Semiconductors Availability: 42,000In StockMOSFETs -12V Vds 10V Vgs MICRO FOOT 1.5 x 1 | 42,000In Stock | Si | SMD/SMT | MicroFoot-6 | P-Channel | 1 Channel | 12 V | 16 A | 22 mOhms | - 10 V, 10 V | 800 mV | 65 nC | - 55 C | + 150 C | 13 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIR882ADP-T1-GE3 TTI: SIR882ADP-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 100V Vds 20V Vgs PowerPAK SO-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 60 A | 7.2 mOhms | - 20 V, 20 V | 1.2 V | 60 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR882ADP-GE3 | |||
Mfr: SI7106DN-T1-E3 TTI: SI7106DN-T1-E3 Vishay Semiconductors Availability: 9,000In StockMOSFETs 20V Vds 12V Vgs PowerPAK 1212-8 | 9,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 20 V | 19.5 A | 6.2 mOhms | - 12 V, 12 V | 1.5 V | 17.5 nC | - 55 C | + 150 C | 3.8 W | Enhancement | TrenchFET | Reel | SI7106DN-E3 | |||
Mfr: IRFI540GPBF TTI: IRFI540GPBF Vishay Semiconductors Availability: 500In StockMOSFETs TO220 100V 17A N-CH MOSFET | 500In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 17 A | 77 mOhms | - 20 V, 20 V | 2 V | 72 nC | - 55 C | + 175 C | 48 W | Enhancement | Tube |
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