Vishay Semiconductors - MOSFETs
2,042 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIJA54DP-T1-GE3 TTI: SIJA54DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V Vds 20V Vgs PowerPAK SO-8L | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8-4 | N-Channel | 1 Channel | 40 V | 60 A | 2.35 mOhms | - 16 V, 20 V | 2.4 V | 104 nC | - 55 C | + 150 C | 36.7 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: IRF510STRLPBF TTI: IRF510STRLPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO263 100V 5.6A N-CH MOSFET | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 5.6 A | 540 mOhms | - 20 V, 20 V | 2 V | 8.3 nC | - 55 C | + 175 C | 43 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 400 V | 2 A | 3.6 Ohms | - 20 V, 20 V | 4 V | 17 nC | - 55 C | + 150 C | 36 W | Enhancement | Tube | IRF710PBF-BE3 | |||||
Mfr: SI4128DY-T1-GE3 TTI: SI4128DY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 10.9 A | 24 mOhms | - 20 V, 20 V | 1 V | 12 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI4128DY-GE3 | |||
Mfr: IRFBC30APBF TTI: IRFBC30APBF Vishay Semiconductors Availability: 0In StockMOSFETs TO220 600V 3.6A N-CH | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 3.6 A | 2.2 Ohms | - 30 V, 30 V | 4.5 V | 23 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | IRFBC30APBF-BE3 | ||||
Mfr: SISF02DN-T1-GE3 TTI: SISF02DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs PPAK1212 2NCH 25V 30.5A | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 40 A | 2.15 mOhms | - 16 V, 20 V | 1.1 V | 51 nC | - 55 C | + 150 C | 52 W | Enhancement | PowerPAK | Reel | ||||
Mfr: SI4368DY-T1-E3 TTI: SI4368DY-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 30 Volt 25 Amp 3.5W | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 25 A | 3.2 mOhms | - 12 V, 12 V | 600 mV | 80 nC | - 55 C | + 150 C | 3.5 W | Enhancement | TrenchFET | Reel | SI4368DY-T1 | |||
Mfr: IRFZ44STRLPBF TTI: IRFZ44STRLPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-Chan 60V 50 Amp | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 60 V | 50 A | 28 mOhms | - 20 V, 20 V | 2 V | 67 nC | - 55 C | + 175 C | 150 W | Enhancement | Reel | |||||
Mfr: IRFR9214TRLPBF TTI: IRFR9214TRLPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO252 250V 2.7A P-CH MOSFET | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 250 V | 2.7 A | 3 Ohms | - 20 V, 20 V | 4 V | 14 nC | - 55 C | + 150 C | 50 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 2 Channel | 30 V | 5.8 A | 40 mOhms | - 20 V, 20 V | 3 V | 9 nC | - 55 C | + 150 C | 2.3 W | Enhancement | TrenchFET | Reel | SI4936CDY-GE3 | ||||
Mfr: SI4816BDY-T1-E3 TTI: SI4816BDY-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 2 Channel | 30 V | 6.8 A, 11.4 A | 11.5 mOhms, 18.5 mOhms | - 20 V, 20 V | 1 V | 7.8 nC, 11.6 nC | - 55 C | + 150 C | 1.4 W, 2.4 W | Enhancement | TrenchFET | Reel | SI4816BDY-E3 | |||
Mfr: SI4686DY-T1-E3 TTI: SI4686DY-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V 18.2A 5.2W 9.5mohm @ 10V | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 18.2 A | 9.5 mOhms | - 20 V, 20 V | 1 V | 26 nC | - 55 C | + 150 C | 5.2 W | Enhancement | TrenchFET | Reel | SI4686DY-E3 | |||
Mfr: SI2307CDS-T1-E3 TTI: SI2307CDS-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds 20V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 3.5 A | 88 mOhms | - 20 V, 20 V | 1 V | 4.1 nC | - 55 C | + 150 C | 1.8 W | Enhancement | TrenchFET | Reel | SI2307CDS-T1-BE3 SI2307CDS-E3 | |||
Mfr: IRFIB7N50APBF TTI: IRFIB7N50APBF Vishay Semiconductors Availability: 0In StockMOSFETs TO220 500V 6.6A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 6.6 A | 520 mOhms | - 30 V, 30 V | 2 V | 52 nC | - 55 C | + 150 C | 60 W | Enhancement | Tube | |||||
Mfr: SI4143DY-T1-GE3 TTI: SI4143DY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds 25V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 30 V | 25.3 A | 9.2 mOhms | - 25 V, 25 V | 2.5 V | 167 nC | - 55 C | + 150 C | 6 W | Enhancement | Reel | |||||
Mfr: SI5515CDC-T1-E3 TTI: SI5515CDC-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 8V Vgs 1206-8 ChipFET | 0In Stock | Si | SMD/SMT | ChipFET-8 | N-Channel, P-Channel | 2 Channel | 20 V | 4 A | 36 mOhms, 100 mOhms | - 8 V, 8 V | 400 mV | 11.3 nC, 11 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI5515CDC-E3 | |||
Mfr: IRFBC40LCPBF TTI: IRFBC40LCPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO220 600V 6.2A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 6.2 A | 1.2 Ohms | - 30 V, 30 V | 4 V | 39 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRFBC40LCPBF-BE3 | ||||
Mfr: SI4430BDY-T1-E3 TTI: SI4430BDY-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V 20A 0.0045Ohm | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 20 A | 4.5 mOhms | - 20 V, 20 V | 1 V | 36 nC | - 55 C | + 150 C | 3 W | Enhancement | TrenchFET | Reel | SI4430BDY-E3 | |||
Mfr: IRFZ48RSPBF TTI: IRFZ48RSPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-Chan 60V 50 Amp | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 60 V | 50 A | 18 mOhms | - 20 V, 20 V | 4 V | 110 nC | - 55 C | + 175 C | 190 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 200 V | 2.6 A | 1.5 Ohms | - 20 V, 20 V | 4 V | 8.2 nC | - 55 C | + 150 C | 25 W | Enhancement | Tube | IRFR210PBF-BE3 | |||||
Mfr: IRF9630SPBF TTI: IRF9630SPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO263 200V 6.5A P-CH MOSFET | 0In Stock | Si | SMD/SMT | TO-263-3 | P-Channel | 1 Channel | 200 V | 6.5 A | 800 mOhms | - 20 V, 20 V | 4 V | 29 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | |||||
Mfr: SIR438DP-T1-GE3 TTI: SIR438DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 25V 60A 83W | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 25 V | 60 A | 1.8 mOhms | - 20 V, 20 V | 1 V | 105 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR438DP-GE3 | |||
Mfr: SIR172ADP-T1-GE3 TTI: SIR172ADP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 24 A | 8.5 mOhms | - 20 V, 20 V | 1.2 V | 44 nC | - 55 C | + 150 C | 29.8 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SUD35N10-26P-GE3 TTI: SUD35N10-26P-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 100V 35A 83W 26mohm @ 10V | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 35 A | 26 mOhms | - 20 V, 20 V | 2.5 V | 47 nC | - 55 C | + 175 C | 83 W | Enhancement | TrenchFET | Reel | SUD35N10-26P-BE3 | |||
Mfr: SIR770DP-T1-GE3 TTI: SIR770DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 2 Channel | 30 V | 8 A | 21 mOhms | - 20 V, 20 V | 1.2 V | 21 nC | - 55 C | + 150 C | 17.8 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR770DP-GE3 |
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