Vishay Semiconductors - MOSFETs
2,042 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 5.6 A | 540 mOhms | - 10 V, 10 V | 2 V | 6.1 nC | - 55 C | + 175 C | 43 W | Enhancement | Tube | IRL510PBF-BE3 | |||||
Mfr: SI4490DY-T1-E3 TTI: SI4490DY-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs RECOMMENDED ALT SI44 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 200 V | 4 A | 80 mOhms | - 20 V, 20 V | 2 V | 42 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI4490DY-E3 | |||
Mfr: IRF9Z14PBF TTI: IRF9Z14PBF Vishay Semiconductors Availability: 0In StockMOSFETs TO220 P-CH 60V 6.7A | 0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 60 V | 6.7 A | 500 mOhms | - 20 V, 20 V | 4 V | 12 nC | - 55 C | + 175 C | 43 W | Enhancement | Tube | IRF9Z14PBF-BE3 | ||||
Mfr: SI4154DY-T1-GE3 TTI: SI4154DY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 40 V | 36 A | 3.3 mOhms | - 20 V, 20 V | 1 V | 105 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET | Reel | SI4154DY-GE3 | |||
Mfr: SI7998DP-T1-GE3 TTI: SI7998DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 2 Channel | 30 V | 25 A, 30 A | 5.3 mOhms, 9.3 mOhms | - 20 V, 20 V | 2.5 V | 17 nC, 32 nC | - 55 C | + 150 C | 22 W, 40 W | Enhancement | TrenchFET | Reel | SI7998DP-GE3 | |||
Mfr: SIR166DP-T1-GE3 TTI: SIR166DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 40 A | 3.2 mOhms | - 20 V, 20 V | 1.2 V | 77 nC | - 55 C | + 150 C | 48 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR166DP-GE3 | |||
Mfr: SIJ494DP-T1-GE3 TTI: SIJ494DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-Ch 150V Vds 16.1nC Qg Typ | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8-4 | N-Channel | 1 Channel | 150 V | 36.8 A | 19.3 mOhms | - 20 V, 20 V | 2.5 V | 31 nC | - 55 C | + 150 C | 69.4 W | Enhancement | ThunderFET, PowerPAK | Reel | ||||
Mfr: SISA35DN-T1-GE3 TTI: SISA35DN-T1-GE3 Vishay Semiconductors MOSFETs P-CHANNEL 30-V (D-S) PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 30 V | 16 A | 19 mOhms | - 20 V, 20 V | 2.2 V | 28 nC | - 55 C | + 150 C | 24 W | Enhancement | TrenchFET | Reel | ||||
Mfr: IRFR120TRLPBF TTI: IRFR120TRLPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-Chan 100V 7.7 Amp | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 7.7 A | 270 mOhms | - 20 V, 20 V | 4 V | 16 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | IRFR120TRLPBF-BE3 | ||||
Mfr: SUM90N03-2M2P-E3 TTI: SUM90N03-2M2P-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V 90A 250W | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 30 V | 90 A | 1.8 mOhms | - 20 V, 20 V | 1.5 V | 257 nC | - 55 C | + 175 C | 250 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI7820DN-T1-GE3 TTI: SI7820DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 200V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 200 V | 1.7 A | 240 mOhms | - 20 V, 20 V | 2 V | 12.1 nC | - 55 C | + 150 C | 1.5 W | Enhancement | TrenchFET | Reel | SI7820DN-GE3 | |||
Mfr: SI7615CDN-T1-GE3 TTI: SI7615CDN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 8V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 20 V | 35 A | 7.2 mOhms | - 8 V, 8 V | 1 V | 111 nC | - 55 C | + 150 C | 33 W | Enhancement | Reel | |||||
Mfr: SIA931DJ-T1-GE3 TTI: SIA931DJ-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds 20V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 2 Channel | 30 V | 4.5 A | 65 mOhms | - 20 V, 20 V | 1.2 V | 13 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI4166DY-T1-GE3 TTI: SI4166DY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 30.5 A | 3.9 mOhms | - 20 V, 20 V | 1.2 V | 65 nC | - 55 C | + 150 C | 6.5 W | Enhancement | TrenchFET | Reel | SI4166DY-GE3 | |||
Mfr: SISS61DN-T1-GE3 TTI: SISS61DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs Pch 20V Vds 8V Vgs PowerPAK 1212-8S | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 20 V | 111.9 A | 2.9 mOhms | - 8 V, 8 V | 900 mV | 154 nC | - 55 C | + 150 C | 65.8 W | Enhancement | Reel | |||||
Mfr: SI7716ADN-T1-GE3 TTI: SI7716ADN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 16 A | 13.5 mOhms | - 20 V, 20 V | 2.5 V | 15.4 nC | - 55 C | + 150 C | 27.7 W | Enhancement | TrenchFET | Reel | SI7716ADN-GE3 | |||
Mfr: SI7119DN-T1-E3 TTI: SI7119DN-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs -200V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 200 V | 3.8 A | 1.05 Ohms | - 20 V, 20 V | 4 V | 16.2 nC | - 50 C | + 150 C | 52 W | Enhancement | TrenchFET | Reel | SI7119DN-E3 | |||
Mfr: SI3464DV-T1-GE3 TTI: SI3464DV-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 8V Vgs TSOP-6 | 0In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 20 V | 8 A | 24 mOhms | - 8 V, 8 V | 1 V | 18 nC | - 55 C | + 150 C | 3.6 W | Enhancement | TrenchFET | Reel | SI3464DV-T1-BE3 | |||
Mfr: SI7658ADP-T1-GE3 TTI: SI7658ADP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 60 A | 2.2 mOhms | - 20 V, 20 V | 1.2 V | 110 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchFET | Reel | SI7658ADP-GE3 | |||
Mfr: SI7738DP-T1-E3 TTI: SI7738DP-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 150V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 150 V | 30 A | 38 mOhms | - 20 V, 20 V | 4 V | 35 nC | - 55 C | + 150 C | 96 W | Enhancement | TrenchFET | Reel | SI7738DP-E3 | |||
Mfr: SIA437DJ-T1-GE3 TTI: SIA437DJ-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 8V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 20 V | 29.7 A | 12 mOhms | - 8 V, 8 V | 900 mV | 90 nC | - 50 C | + 150 C | 19 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI7956DP-T1-E3 TTI: SI7956DP-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 150V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 2 Channel | 150 V | 4.1 A | 105 mOhms | - 20 V, 20 V | 4 V | 17 nC | - 55 C | + 150 C | 3.5 W | Enhancement | TrenchFET | Reel | SI7956DP-E3 | |||
Mfr: IRF840STRRPBF TTI: IRF840STRRPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO263 500V 8A N-CH MOSFET | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 500 V | 8 A | 850 mOhms | - 20 V, 20 V | 2 V | 63 nC | - 55 C | + 150 C | 3.1 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 8.8 A | 280 mOhms | - 20 V, 20 V | 4 V | 19 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | IRFR9024TRPBF-BE3 | |||||
Mfr: IRF710SPBF TTI: IRF710SPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO263 400V 2A N-CH MOSFET | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 400 V | 2 A | 3.6 Ohms | - 20 V, 20 V | 2 V | 17 nC | - 55 C | + 150 C | 36 W | Enhancement | Tube |
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