Vishay Semiconductors - MOSFETs
2,042 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SI8416DB-T2-E1 TTI: SI8416DB-T2-E1 Vishay Semiconductors Availability: 0In StockMOSFETs 8V Vds 5V Vgs MICRO FOOT 1.5 x 1 | 0In Stock | Si | SMD/SMT | MicroFoot-6 | N-Channel | 1 Channel | 8 V | 16 A | 23 mOhms | - 5 V, 5 V | 800 mV | 17 nC | - 55 C | + 150 C | 13 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIR862DP-T1-GE3 TTI: SIR862DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 25V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 25 V | 50 A | 2.8 mOhms | - 20 V, 20 V | 1.2 V | 90 nC | - 55 C | + 150 C | 69 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIA907EDJT-T1-GE3 TTI: SIA907EDJT-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 12V Vgs Thin PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 2 Channel | 20 V | 4.5 A | 47 mOhms, 47 mOhms | - 12 V, 12 V | 1.4 V | 23 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA907EDJT-GE3 | |||
Mfr: SIR140DP-T1-RE3 TTI: SIR140DP-T1-RE3 Vishay Semiconductors Availability: 0In StockMOSFETs 25V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 25 V | 100 A | 900 uOhms | - 16 V, 20 V | 1 V | 113 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIR112DP-T1-RE3 TTI: SIR112DP-T1-RE3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 40 V | 133 A | 1.96 mOhms | - 16 V, 20 V | 1.1 V | 59 nC | - 55 C | + 150 C | 62.5 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIHD690N60E-GE3 TTI: SIHD690N60E-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 600V DPAK (TO-252) N-CHANNEL | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 6.4 A | 700 mOhms | - 30 V, 30 V | 5 V | 8 nC | - 55 C | + 150 C | 62.5 W | Enhancement | Tube | |||||
Mfr: SIR608DP-T1-RE3 TTI: SIR608DP-T1-RE3 Vishay Semiconductors Availability: 0In StockMOSFETs 45V Vds; 20/-16V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 45 V | 208 A | 1.2 mOhms | - 16 V, 20 V | 1.1 V | 167 nC | - 55 C | + 150 C | 104 W | Enhancement | Reel | |||||
Mfr: SI8497DB-T2-E1 TTI: SI8497DB-T2-E1 Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds 12V Vgs MICRO FOOT 1.5 x 1 | 0In Stock | Si | SMD/SMT | MicroFoot-6 | P-Channel | 1 Channel | 30 V | 13 A | 43 mOhms | - 12 V, 12 V | 1.1 V | 49 nC | - 55 C | + 150 C | 13 W | Enhancement | TrenchFET | Reel | ||||
Mfr: IRFR9120PBF-BE3 TTI: IRFR9120PBF-BE3 Vishay Semiconductors Availability: 0In StockMOSFETs TO252 100V 5.6A P-CH MOSFET | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 100 V | 5.6 A | 600 mOhms | - 20 V, 20 V | 2 V | 18 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | |||||
Mfr: IRFR220TRPBF-BE3 TTI: IRFR220TRPBF-BE3 Vishay Semiconductors Availability: 0In StockMOSFETs TO252 200V 4.8A N-CH MOSFET | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 200 V | 4.8 A | 800 mOhms | - 20 V, 20 V | 2 V | 14 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | |||||
Mfr: SIZ980DT-T1-GE3 TTI: SIZ980DT-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs PowerPAIR 6 x 5 | 0In Stock | Si | SMD/SMT | PowerPAIR-6x5-8 | N-Channel | 2 Channel | 30 V | 20 A, 60 A | 4.7 mOhms, 1.1 mOhms | - 16 V, 20 V | 1.2 V, 1.1 V | 18 nC, 77 nC | - 55 C | + 150 C | 20 W, 66 W | Enhancement | TrenchFET | Reel | ||||
Mfr: IRFBF20LPBF TTI: IRFBF20LPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-Chan 900V 1.7 Amp | 0In Stock | Si | Through Hole | TO-262-3 | N-Channel | 1 Channel | 900 V | 1.7 A | 8 Ohms | - 20 V, 20 V | 2 V | 38 nC | - 55 C | + 150 C | 54 W | Enhancement | Tube | |||||
Mfr: IRFI9630GPBF TTI: IRFI9630GPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO220 200V 4.3A P-CH MOSFET | 0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 200 V | 4.3 A | 800 mOhms | - 20 V, 20 V | 4 V | 29 nC | - 55 C | + 150 C | 40 W | Enhancement | Tube | |||||
Mfr: IRF9620STRLPBF TTI: IRF9620STRLPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO263 200V 3.5A P-CH MOSFET | 0In Stock | Si | SMD/SMT | TO-263-3 | P-Channel | 1 Channel | 200 V | 3.5 A | 1.5 Ohms | - 20 V, 20 V | 4 V | 22 nC | - 55 C | + 150 C | 3 W | Enhancement | Reel | |||||
Mfr: IRF510STRRPBF TTI: IRF510STRRPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO263 100V 5.6A N-CH MOSFET | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 5.6 A | 540 mOhms | - 20 V, 20 V | 2 V | 8.3 nC | - 55 C | + 175 C | 43 W | Enhancement | Reel | |||||
Mfr: SIR696DP-T1-GE3 TTI: SIR696DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 125V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 125 V | 60 A | 11.5 mOhms | - 20 V, 20 V | 2.5 V | 24.8 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI4686DY-T1-GE3 TTI: SI4686DY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V 18.2A 5.2W 9.5mohm @ 10V | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 18.2 A | 9.5 mOhms | - 20 V, 20 V | 1 V | 26 nC | - 55 C | + 150 C | 5.2 W | Enhancement | TrenchFET | Reel | SI4686DY-GE3 | |||
Mfr: SIR610DP-T1-RE3 TTI: SIR610DP-T1-RE3 Vishay Semiconductors Availability: 0In StockMOSFETs 200V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 200 V | 35.4 A | 23.9 mOhms | - 20 V, 20 V | 2 V | 38 nC | - 55 C | + 150 C | 104 W | Enhancement | ThunderFET, PowerPAK | Reel | ||||
Mfr: SI8819EDB-T2-E1 TTI: SI8819EDB-T2-E1 Vishay Semiconductors Availability: 0In StockMOSFETs -12V Vds 8V Vgs MICRO FOOT 0.8 x 0.8 | 0In Stock | Si | SMD/SMT | MicroFoot-4 | P-Channel | 1 Channel | 12 V | 2.9 A | 80 mOhms | - 8 V, 8 V | 900 mV | 7 nC | - 55 C | + 150 C | 900 mW | Enhancement | Reel | |||||
Mfr: SISD5806DN-T1-UE3 TTI: SISD5806DN-T1-UE3 Vishay Semiconductors Availability: 0In StockMOSFETs PPAK1212 N-CH 80V 64A | 0In Stock | Reel | ||||||||||||||||||||
Mfr: SI8812DB-T2-E1 TTI: SI8812DB-T2-E1 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 8V Vgs MICRO FOOT 0.8 x 0.8 | 0In Stock | Si | SMD/SMT | MicroFoot-4 | N-Channel | 1 Channel | 20 V | 3.2 A | 60 mOhms | - 8 V, 8 V | 400 mV | 17 nC | - 55 C | + 150 C | 900 mW | Enhancement | TrenchFET | Reel | ||||
Mfr: SISS588DN-T1-GE3 TTI: SISS588DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs PPAK1212 N-CH 80V 16.9A | 0In Stock | Si | SMD/SMT | PowerPAK1212-8 | N-Channel | 1 Channel | 80 V | 58.1 A | 7.2 mOhms | - 20 V, 20 V | 4 V | 18.7 nC | - 55 C | + 150 C | 56.8 W | Enhancement | Reel | |||||
Mfr: SISS42DN-T1-GE3 TTI: SISS42DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 100V Vds 20V Vgs PowerPAK 1212-8S | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8S-8 | N-Channel | 1 Channel | 100 V | 40.5 A | 14.4 mOhms | - 20 V, 20 V | 2 V | 24.8 nC | - 55 C | + 150 C | 57 W | Enhancement | Reel | |||||
Mfr: SUD40151EL-GE3 TTI: SUD40151EL-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V Vds 20V Vgs TO-252 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 40 V | 42 A | 12 mOhms | - 20 V, 20 V | 1.5 V | 74.3 nC | - 55 C | + 175 C | 50 W | Enhancement | Reel | |||||
Mfr: SI3456DDV-T1-E3 TTI: SI3456DDV-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs TSOP-6 | 0In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 30 V | 6.3 A | 40 mOhms | - 20 V, 20 V | 1.2 V | 9 nC | - 55 C | + 150 C | 2.7 W | Enhancement | TrenchFET | Reel | SI3456DDV-T1-BE3 SI3456DDV-E3 |
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