Vishay Semiconductors - MOSFETs
2,042 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 60 V | 1.6 A | 345 mOhms | - 20 V, 20 V | 3 V | 2.7 nC | - 55 C | + 150 C | 1.7 W | Enhancement | TrenchFET | Reel | SI2309CDS-T1-BE3 SI2309CDS-GE3 | ||||
Mfr: SI2318CDS-T1-GE3 TTI: SI2318CDS-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V Vds 20V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 40 V | 5.6 A | 42 mOhms | - 20 V, 20 V | 2.5 V | 2.9 nC | - 55 C | + 150 C | 2.1 W | Enhancement | TrenchFET | Reel | SI2318CDS-T1-BE3 SI2318CDS-GE3 | |||
Mfr: SIHB33N60ET1-GE3 TTI: SIHB33N60ET1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-Channel 600V | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 33 A | 98 mOhms | - 30 V, 30 V | 4 V | 103 nC | - 55 C | + 150 C | 278 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 200 V | 5.3 A | 80 mOhms | - 20 V, 20 V | 4.5 V | 42 nC | - 55 C | + 150 C | 5.2 W | Enhancement | TrenchFET | Reel | SI7450DP-E3 | ||||
Mfr: SIRA80DP-T1-RE3 TTI: SIRA80DP-T1-RE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20/-16V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 100 A | 620 uOhms | - 16 V, 20 V | 2.2 V | 125 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: IRLZ14SPBF TTI: IRLZ14SPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO263 N-CH 60V 10A | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 60 V | 10 A | 200 mOhms | - 10 V, 10 V | 1 V | 8.4 nC | - 55 C | + 175 C | 3.7 W | Enhancement | Tube | |||||
Mfr: SIA921EDJ-T1-GE3 TTI: SIA921EDJ-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 12V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 2 Channel | 20 V | 4.5 A | 48 mOhms, 48 mOhms | - 12 V, 12 V | 1.4 V | 23 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA921EDJ-GE3 | |||
Mfr: IRFZ14SPBF TTI: IRFZ14SPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-Chan 60V 10 Amp 200mohm @ 10V | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 60 V | 10 A | 200 mOhms | - 20 V, 20 V | 2 V | 11 nC | - 55 C | + 175 C | 43 W | Enhancement | Tube | |||||
Mfr: SISA24DN-T1-GE3 TTI: SISA24DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 25V Vds 60A Id 17.2nC Qg Typ. | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 25 V | 60 A | 1.15 mOhms | - 16 V, 20 V | 1 V | 55 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: IRF9Z24PBF TTI: IRF9Z24PBF Vishay Semiconductors Availability: 0In StockMOSFETs TO220 P-CH 60V 11A | 0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 60 V | 11 A | 280 mOhms | - 20 V, 20 V | 4 V | 19 nC | - 55 C | + 175 C | 2.5 W | Enhancement | Tube | IRF9Z24PBF-BE3 | ||||
Mfr: IRFR9210TRPBF TTI: IRFR9210TRPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO252 200V 1.9A P-CH MOSFET | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 200 V | 1.9 A | 3 Ohms | - 20 V, 20 V | 4 V | 8.9 nC | - 55 C | + 150 C | 25 W | Enhancement | Reel | |||||
Mfr: SI2307CDS-T1-GE3 TTI: SI2307CDS-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds 20V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 3.5 A | 88 mOhms | - 20 V, 20 V | 3 V | 4.1 nC | - 55 C | + 150 C | 1.8 W | Enhancement | TrenchFET | Reel | SI2307CDS-T1-BE3 SI2307CDS-GE3 | |||
0In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 30 V | 25.7 A | 5 mOhms | - 20 V, 20 V | 2.5 V | 203 nC | - 55 C | + 150 C | 6 W | Enhancement | TrenchFET | Reel | |||||
Mfr: IRF9510STRLPBF TTI: IRF9510STRLPBF Vishay Semiconductors Availability: 0In StockMOSFETs P-Chan 100V 4.0 Amp | 0In Stock | Si | SMD/SMT | TO-263-3 | P-Channel | 1 Channel | 100 V | 4 A | 1.2 Ohms | - 20 V, 20 V | 4 V | 8.7 nC | - 55 C | + 175 C | 43 W | Enhancement | Reel | |||||
Mfr: SUP90P06-09L-E3 TTI: SUP90P06-09L-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 60V 90A 250W 9.3mohm @ 10V | 0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 60 V | 90 A | 7.4 mOhms | - 20 V, 20 V | 3 V | 240 nC | - 55 C | + 175 C | 250 W | Enhancement | TrenchFET | Tube | ||||
Mfr: IRL640STRLPBF TTI: IRL640STRLPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-Chan 200V 17 Amp | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 200 V | 17 A | 180 mOhms | - 10 V, 10 V | 1 V | 66 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | |||||
Mfr: SI7858BDP-T1-GE3 TTI: SI7858BDP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 12V Vds 8V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 12 V | 40 A | 2.5 mOhms | - 8 V, 8 V | 1 V | 56 nC | - 55 C | + 150 C | 48 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1 kV | 1.4 A | 11 Ohms | - 20 V, 20 V | 4 V | 38 nC | - 55 C | + 150 C | 54 W | Enhancement | Tube | IRFBG20PBF-BE3 | |||||
Mfr: IRF640STRLPBF TTI: IRF640STRLPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO263 200V 18A N-CH MOSFET | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 200 V | 18 A | 180 mOhms | - 20 V, 20 V | 2 V | 70 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 20 V | 6 A | 31.8 mOhms | - 8 V, 8 V | 1 V | 8.8 nC | - 55 C | + 150 C | 2.1 W | Enhancement | TrenchFET | Reel | SI2312CDS-T1-BE3 SI2312CDS-GE3 SI7621DN-T1-GE3 | ||||
0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 5.9 A | 45 mOhms | - 20 V, 20 V | 2.5 V | 7 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | SI2343CDS-T1-BE3 SI2343CDS-GE3 | ||||
Mfr: SI1469DH-T1-GE3 TTI: SI1469DH-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 12V Vgs SC70-6 | 0In Stock | Si | SMD/SMT | SOT-363-6 | P-Channel | 1 Channel | 20 V | 2.7 A | 155 mOhms | - 12 V, 12 V | 1.5 V | 8.5 nC | - 55 C | + 150 C | 2.78 W | Enhancement | TrenchFET | Reel | SI1469DH-T1-BE3 | |||
Mfr: SI5419DU-T1-GE3 TTI: SI5419DU-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds 20V Vgs PowerPAK ChipFET | 0In Stock | Si | SMD/SMT | ChipFET-8 | P-Channel | 1 Channel | 30 V | 12 A | 33 mOhms | - 20 V, 20 V | 2.5 V | 45 nC | - 55 C | + 150 C | 31 W | Enhancement | TrenchFET | Reel | SI5419DU-GE3 | |||
Mfr: SI7456DDP-T1-GE3 TTI: SI7456DDP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 100V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 27.8 A | 27 mOhms | - 20 V, 20 V | 2.8 V | 19.5 nC | - 55 C | + 150 C | 35.7 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIR188DP-T1-RE3 TTI: SIR188DP-T1-RE3 Vishay Semiconductors Availability: 0In StockMOSFETs 60V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 60 V | 60 A | 3.85 mOhms | - 20 V, 20 V | 2 V | 29 nC | - 55 C | + 150 C | 65.7 W | Enhancement | PowerPAK | Reel |